"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Norihito Suzuki,Yasushi Kobayashi,Harumichi Hino,Shizuo Fujita","Flame detection by a β-Ga2O3-based sensor",,"Jpn. J. Appl. Phys.",,"Vol. 48",," 011605",2009,Jan.
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Potentially high breakdown field in β-Ga2O3 semiconductors","IEEE Nanotechnology Materials and Device Conference 2008",,,,," TuB I-3",2008,Oct.
"大島孝仁,奥野剛也,新井直樹,鈴木悟仁,大平重男,藤田静雄","β-Ga2O3基板を用いて作製したショットキーダイオードの破壊特性","2008年秋季第69回応用物理学会学術講演会",,,,," 3a-ZR-7",2008,Sept.
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy",,"Thin Solid Films",,"Vol. 516",,"pp. 5768-5771",2008,July
"大島 孝仁,新井 直樹,鈴木 悟仁,大平 重男,藤田 静雄","Schottky barrier diode based on β-Ga2O3","第27回電子材料シンポジウム",,,,," J7",2008,July
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Deep UV detectors with a novel Ga2O3 semiconductor","50th Electronic Materials Conference",,,,," Q5",2008,June
"大島孝仁,藤田静雄,新井直樹,鈴木悟仁,大平重男","分子線エピタキシー法によるβ-Ga2O3 基板上へのβ-Ga2O3 ステップフロー成長","2008年春季第55回応用物理学会関係連合講演会",,,,," 28a-W-1",2008,Mar.
"大島孝仁,奥野剛也,藤田静雄,新井直樹,鈴木悟仁,大平重男","β-Ga2O3 基板を利用した深紫外光検出器","2008年春季第55回応用物理学会関係連合講演会",,,,," 28p-ZC-12",2008,Mar.
"Takayoshi Oshima,Takeya OKuno,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga2O3 substrates",,"Appl. Phys. Express",,"Vol. 1",," 011202",2008,Jan.
"Takayoshi Oshima,Norihito Suzuki,Naoki Arai,SHigeo Ohira,Shizuo Fujita","Properties of wide bandgap β-Ga2O3 semiconductros grown by molecular beam epitaxy","34th International Symposium on Compound Semiconductors",,,,," MoC P44",2007,Oct.
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Properties of homoepitaxial-grown β-Ga2O3 by molecular beam epitaxy","5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics",,,,," P43",2007,May