"ŽΒŒ΄‘ε•γ,Ό’†_”V,‘哇Fm,‹R”nŒ[Žk,Š™“c—Y‘ε,μŒ΄‘Ί•qK,“‘“cΓ—Y","ƒ~ƒXƒgCVD–@‚Ι‚ζ‚ιsapphireŠξ”ヿ-Ga<sub>2</sub>O<sub>3</sub> ”––Œ‚̐¬’·","2008”Nt‹G‘ζ55‰ρ‰ž—p•¨—Šw‰οŠΦŒW˜A‡u‰‰‰ο",,,,,"  28a-W-2",2008,Mar.
"Daisuke Shinohara,Hiroyuki Nishinaka,Takayoshi Oshima,Shizuo Fujita","Epitaxial growth of wide bandgap semiconductor: ƒΏ-Ga<sub>2</sub>O<sub>3</sub>  thin film on ƒΏ-AlGa<sub>2</sub>O<sub>3</sub> by ultrasonic spray chemical vapor deposition","14th International Workshop on Oxide Electronics",,,,,"  PII-54",2007,Oct.
"Lv  Jianguo,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima","Carrier concentration dependence of band gap shift in n -type ZnO:Al films",,"Journal of Applied Physics",,"Vol. 101","  083705",,2007,Apr.
"Lv  Jianguo,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima,Shizuo Fujita","ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition",,"Journal of Crystal Growth",,"Vol. 299","  1",,2007,Feb.
"Lv  Jianguo,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima","Carrier concentration induced band-gap shift in Al-doped Zn<sub>1-x</sub>Mg<sub>x</sub>O thin films",,"Applied Physics Letters",,"Vol. 89","  26",,2006,Dec.