"Y. Wu,Hiroki Hasegawa,Kuniyuki KAKUSHIMA,大毛利健治,T. Watanabe,Hitoshi Wakabayashi,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,片岡好則,Kenji Natori,Keisaku Yamada,HIROSHI IWAI","Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance","2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-",,,,,,2014,
"呉研,長谷川明紀,角嶋邦之,渡辺  孝信,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"Hiroki Hasegawa,Y. Wu,宋 ?漢,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"長谷川明紀,呉研,宋 ?漢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価","第61回応用物理学会春季学術講演会",,,,,,2014,
"Y. Wu,Hiroki Hasegawa,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,片岡好則,Kenji Natori,HIROSHI IWAI","Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Y. Wu,竇春萌,F. Wei,Kuniyuki KAKUSHIMA,大毛利健治,パールハットアヘメト,T. Watanabe,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Keisaku Yamada,片岡好則,takeo hattori,HIROSHI IWAI","Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability",,"Japanese Journal of Applied Physics",,"Vol. 52","No. 4S","pp. 04CC28-1-04CC28-5",2013,Apr.
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Size dependent resistivity change of Ni-silicides in nano-region","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","An analytical model of a tunnel FET with Schottky junction","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width","International Symposium on Next-Generation Electronics(ISNE 2013)",,,,,,2013,
"長谷川明紀,呉研,宋 ?漢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上","第74回応用物理学会秋季学術講演会",,,,,,2013,
"Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","An analytical model of a tunnel FET with Schottky junction","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"松本一輝,小山将央,呉研,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","酸化膜被覆型SiナノワイヤおよびSi Fin構造におけるNiシリサイド成長機構の検討","第72回応用物理学会学術講演会",,,,,,2011,
"Y. Wu,Kuniyuki KAKUSHIMA,大毛利健治,Akira Nishiyama,HIROSHI IWAI,Keisaku Yamada","A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors","Tsukuba Nanotechnology Symposium(TNS’11)",,,,,,2011,
"Y. Wu,Naoto Shigemori,Soshi Sato,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,西山彰,KENJI NATORI,takeo hattori,HIROSHI IWAI","Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface","ECS 218th Meeting",,,,,,2010,Oct.
"呉研,茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"呉研,茂森直登,佐藤創志,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface","複合創造領域シンポジウム",,,,,,2010,