"伊藤隆司,酒井義雄","GaAs-MIS-FET",,"応用物理","応用物理学会","Vol. 43","No. 10","pp. 1042-1045",1974,Oct.
"伊藤隆司,酒井義雄","GaAs-MIS-FET",,"応用物理","応用物理学会","Vol. 43","No. 10","pp. 1042-1045",1974,Oct.
"Takashi Ito,Yoshio Sakai","The GaAs Inversion-Type MIS Transistors",,"Solid-State Electronics","Solid-State Electronics","Vol. 17",,"pp. 751-759",1974,July
"伊藤隆司,酒井 義雄","GaAｓ-絶縁膜界面における変性層トラップ密度と充放電特性",,"電気学会論文誌",,"Vol. 94-C","No. 6","pp. 113-120",1974,June
"寺尾博,伊藤隆司,酒井義雄","InAs-MIS構造の界面特性と電界効果トランジスタへの応用",,"電気学会論文誌","電気学会","Vol. 94-C","No. 4","pp. 9-16",1974,Apr.
"伊藤隆司,酒井義雄","GaAs表面への絶縁層の生成と界面特性",,"電気学会論文誌",,"Vol. 93-A","No. 2","pp. 11-18",1973,Feb.