"—« à÷�½,â…�t–G,Šp“ˆ–M”V,•Ð‰ª�D‘¥,�¼ŽR�²,�™ˆä�M”V,Žá—Ñ�®,“›ˆäˆê�¶,–¼ŽæŒ¤“ñ,Šâˆä—m","ƒRƒ“ƒ_ƒNƒ^ƒ“ƒX–@‚É‚æ‚éAlGaN/GaNƒwƒeƒ��Ú�‡ŠE–ʃgƒ‰ƒbƒv‚ÉŠÖ‚·‚錤‹†","‘æ61‰ñ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,,2014,
"unknown unknown,â…�t–G,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Miranda Enrique,shinichi kano,â…�t–G,J. Sune,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures",,"Thin Solid Films",,"Vol. 533",,"pp. 38-42",2013,Apr.
"Y. Wu,â…�t–G,F. Wei,Kuniyuki KAKUSHIMA,‘å–Ñ—˜Œ’Ž¡,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,T. Watanabe,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Keisaku Yamada,•Ð‰ª�D‘¥,takeo hattori,HIROSHI IWAI","Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability",,"Japanese Journal of Applied Physics",,"Vol. 52","No. 4S","pp. 04CC28-1-04CC28-5",2013,Apr.
"unknown unknown,shinichi kano,â…�t–G,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"â…�t–G,Soshi Sato,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Akira Nishiyama,�™ˆä�M”V,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World�fs Leading Scientists",,,,,,2013,
"shinichi kano,â…�t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,•Ð‰ª�D‘¥,Kenji Natori,Miranda Enrique,takeo hattori,HIROSHI IWAI","Influence electrode materials on CeOx based resistive switching","CSTIC 2012",,,,,,2013,
"shinichi kano,â…�t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Akira Nishiyama,�™ˆä�M”V,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive switching properties of Ce oxides","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World�fs Leading Scientists",,,,,,2013,
"unknown unknown,shinichi kano,â…�t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,â…�t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,â…�t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,â…�t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"shinichi kano,â…�t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Transient Switching Characteristics of Ce-oxide Resistive Switching Devices","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Miranda Enrique,shinichi kano,â…�t–G,J. Sune,Kuniyuki KAKUSHIMA,HIROSHI IWAI","New experimental evidences of conductance quantization in electroformed oxide stacks","E-MRS 2012 Spring Meeting",,,,,,2012,
"â…�t–G,Soshi Sato,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,KAZUO TSUTSUI,�¼ŽR�²,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"â…�t–G,Soshi Sato,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,KAZUO TSUTSUI,�¼ŽR�²,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"shinichi kano,â…�t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive swirching properties of Ce oxides","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Wei Li,’†“‡ˆê—T,â…�t–G,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,•Ð‰ª�D‘¥,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method","CSTIC 2012",,,,,,2012,
"â…�t–G,Soshi Sato,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,KAZUO TSUTSUI,�¼ŽR�²,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","Tsukuba Nanotechnology Symposium(TNS�f11)",,,,,,2011,
"Š��^ˆê,MokhammadSholihul Hadi,â…�t–G,Šp“ˆ–M”V,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,“›ˆäˆê�¶,�¼ŽR�²,�™ˆä�M”V,–¼ŽæŒ¤“ñ,•ž•”Œ’—Y,Šâˆä—m","Šó“y—ÞŽ_‰»•¨(CeOX)‚ð—p‚¢‚½MIM�\‘¢‚Ì’ï�RƒXƒCƒbƒ`ƒ“ƒO“Á�«","‘æ72‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï",,,,,,2011,
"â… �t–G,ƒ}ƒCƒ}ƒCƒeƒB  ƒ}ƒCƒ}ƒCƒeƒBƒŒƒƒƒAƒeƒB,ƒ_ƒŠƒ…�[ƒVƒ…ƒUƒf,�²“¡‘nŽu,Šp“ˆ–M”V,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,“›ˆäˆê�¶,�¼ŽR�²,�™ˆä�M”V,–¼ŽæŒ¤“ñ,•ž•”Œ’—Y,Šâˆä—m","Šó“y—Þ(Ce,Eu)Ž_‰»•¨MIM�\‘¢‚Ì’ï�RƒXƒCƒbƒ`ƒ“ƒO“Á�«","‘æ‚V‚P‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï",,,,,,2010,Sept.
"â…�t–G,Œüˆä�OŽ÷,Šp“ˆ–M”V,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,“›ˆäˆê�¶,�¼ŽR�²,�™ˆä�M”V,–¼ŽæŒ¤“ñ,•ž•”Œ’—Y,Šâˆä—m","Feasibility study of Ce oxide for resistive RAM application","•¡�‡‘n‘¢—̈æƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2010,