"ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Takashi Kanda,ŽR‰ΊWŽi,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PD03-1-4",2011,Oct.
"ŽR‰ΊWŽi,ΐK ˜Π–η,M. Watanabe,Kuniyuki KAKUSHIMA,HIROSHI IWAI,Hiroshi Nohira","Study of High-k/Ino.53Ga.0.47As interface by Hard X-ray Photoemission Spectroscopy",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PD02-1-5",2011,Oct.
"‘ςK ˜Π–η,ŽR‰ΊWŽi,¬Ό V,ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Šp“ˆ–M”V,Šβˆδ—m,–μ•½”ŽŽi","AR-XPS‚Ι‚ζ‚ι(NH‚S) ‚QSˆ—‚΅‚½In0.53Ga0.47As•\–Κ‚Μ‰»ŠwŒ‹‡σ‘Τ‚Μ•]‰Ώ","‘ζ72‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2011,
"Hiroshi Nohira,¬ΌV,ŽR‰ΊWŽi,Kuniyuki KAKUSHIMA,HIROSHI IWAI,Y. Hioshi,K. Sawano,Y. Shiraki","XPS Study on Chemical Bonding States of high-k/high-ƒΚ Gate Stacks for Advanced CMOS","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 137-146",2011,
"ŽR‰Ί WŽi,Šp“ˆ–M”V,Šβˆδ—m","HfO2/La2O‚R/In0.53Ga0.47As\‘’‚Μ”Mˆΐ’萫","‘ζ‚V‚P‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2010,Sept.