"DARYOUSH ZADEH,Soshi Sato,Kuniyuki KAKUSHIMA,A. Srivastava,Ahmet Parhat,KAZUO TSUTSUI,���R��,Nobuyuki Sugii,KENJI NATORI,takeo hattori,C.K. Sarkar,HIROSHI IWAI","Effects of La2O3  incorporation in HfO2 gated nMOSFETs on low-frequency noise",,"Microelectronics Reliability",,"Vol. 51",,"pp. 746-750",2011,Apr.