"ダリューシュザデ,Kuniyuki KAKUSHIMA,Takashi Kanda,Y.C.Lin,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques",,"Microelectronic Engineering",,"Vol. 88","No. 7","pp. 1109-1112",2011,July