"ˆäŽèŒ[‰î,•Ð�£‹M‹`,–쑺Œ¤“ñ,‰_Œ©“ú�o–ç,�×–ì�G—Y,�_’J—˜•v","ƒAƒ‚ƒ‹ƒtƒ@ƒXŽ_‰»•¨”¼“±‘Ì�FIn?Ga?Zn?O",,"21�¢‹I”Å”––Œ�ì�»‰ž—pƒnƒ“ƒhƒuƒbƒN 4•Ò 2�Í Œõ•”•i 7�ß “§–¾“±“d–Œ",,,,,2019,June
"�_’J—˜•v,‰_Œ©“ú�o–ç,�×–ì�G—Y","�È“d—Í‹Z�p‚Æ‚µ‚ẴAƒ‚ƒ‹ƒtƒ@ƒXŽ_‰»•¨”¼“±‘Ì",,"J. Soc. Inorg. Mater. Jpn.",,"Vol. 21",,"pp. 389-394",2014,
"K. Abe,H. Kumomi,T. Kamiya,H. Hosono","Modeling of Transparent Amorphous Oxide Semiconductor Thin-Film Transistor","Proc. IDW'13",,,,,"p. 311",2013,Dec.
"TOSHIO KAMIYA,K. Kimoto,N. Ohashi,Katsumi Abe,Yuichirou Hanyu,hideya kumomi,HIDEO HOSONO","Electron-Beam-Induced Crystallization of Amorphous In-Ga-Zn-O Thin Films Fabricated by UHV Sputtering","Proc. IDW'13",,,,,"p. 280",2013,Dec.
"T. Kamiya,K. Ide,K. Nomura,H. Kumomi,H. Hosono","Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O","Proc. IDW'13",,,,,"p. 478",2013,Dec.
"Yuichiro Hanyu,Kay Domen,Kenji Nomura,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors",,"Appl. Phys. Lett.",,"Vol. 103","No. 20","pp. 202114-1 - 3",2013,Nov.
"�_’J—˜•v,‰_Œ©“ú�o–ç,�×–ì�G—Y","Ž_‰»•¨”¼“±‘ÌTFT‚ÌŒ¤‹†“®Œü‚Ɖۑè; ŒŽŠÔƒfƒBƒXƒvƒŒƒC10ŒŽ�†, 1-8,",,"ŒŽŠÔƒfƒBƒXƒvƒŒƒC",,"Vol. 10ŒŽ�†",,"pp. 1-8",2013,
"�_’J—˜•v,‰_Œ©“ú�o–ç,�×–ì�G—Y:","ƒAƒ‚ƒ‹ƒtƒ@ƒXŽ_‰»•¨”¼“±‘Ì”––Œ; •\–Ê‹Z�p (2013”N7ŒŽ�†)",,,,"Vol. 64",,"pp. 392-395",2013,
"Hiromichi Ohta,Taku Mizuno,Shijian Zheng,Takeharu Kato,Yuichi Ikuhara,Katsumi Abe,Hideya Kumomi,Kenji Nomura,Hideo Hosono","Unusually Large Enhancement of Thermopower in an Electric Field InducedTwo-Dimensional Electron Gas",,"Advanced. Materials",,"Vol. 24",,"pp. 740-744",2012,
"Katsumi Abe,Kenji Takahashi,Ayumu Sato,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono","Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors",,"Thin Solid Films",,"Vol. 520",,"pp. 3791-3795",2012,