"Kunihiro Suzuki,Tetsu Fukano,Tatsuya Yamazaki,Shinpei Hijiya,Takashi Ito,Hajime Ishikawa","Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy","Tech. Dig. of, IEDM","Tech. Dig. of, IEDM",,,,"pp. 811-813",1998,
"Kenichi Goto,Tatsuya Yamazaki,Yasuo Nara,Tetsu Fukano,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Ti Salicide Process for Sub-quarter-Micron CMOS Devices",,"IEICE TRANSACTIONS on Electronics","The Institute of Electronics, Information and Communication Engineers","Vol. E-77-C","No. 3","pp. 480-485",1994,Mar.
"Manabu Kojima,Atsushi Fukuroda,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques",,"IEICE TRANSACTIONS on Electronics","The Institute of Electronics, Information and Communication Engineers","Vol. E-76-C","No. 4","pp. 572-576",1993,Apr.
"Tatsuya Yamazaki,Kenichi Goto,Tetsu Fukano,Yasuo Nara,Toshihiro Sugii,Takashi Ito","2l psec Switching 0.13ƒÊm-CMOS at Room Temperature Using High Performance Co Salicide Process","IEDM Dig. of Tech.","IEDM Dig. of Tech.",,,,"pp. 906-909",1993,
"Naoshi Higaki,Tetsu Fukano,Atsushi Fukuroda,Toshihiro Sugii,Yoshihiro   Arimoto,Takashi Ito","A Thin-Base Lateral Bipolar Transistor Fabricated on   Bonded SOI","Dig. Tech. Papers of Symp. on VLSI Tech.","Dig. Tech. Papers of Symp. on VLSI Tech.",,,,"pp. 53-54",1991,
"Manabu Kojim,Atsushi Fukuroda,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","High-Speed Epitaxial Base Transistors on Bonded SOI","IEEE 1991 ,Bipolar Circuits and Technology Meeting","IEEE 1991 ,Bipolar Circuits and Technology Meeting",,,,"pp. 63-66",1991,
"Atsushi Fukuroda,Toru Miyabo,Manabu Kojima,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor","Ext. Abst. of Int. Conf. on SSDM","Ext. Abst. of Int. Conf. on SSDM",,,,"pp. 168-169",1991,
"Toshihiro Sugii,Tatsuya Yamazaki,Kunihiro Suzuki,Tetsu Fukano,Takashi Ito","Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 659-662",1989,
"Kunihiro Suzuki,Tetsu Fukano,Hiroshi Ishiwari,Tatsuya Yamazaki,Masao Taguchi,Takashi Ito,Hajime Ishikawa","50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth","Digest of Symp. on VLSI Technology","Digest of Symp. on VLSI Technology",,,,"pp. 91-93",1989,
"Toshihiro Sugii,Tatsuya Yamazaki,Tetsu Fukano,Takashi Ito","Epitaxially Grown Base Transistor for High-Speed Operation",,"Electron Device Letters, IEEE","IEEE Electron Devices Society","Vol. 8","No. 11","pp. 528-530",1987,Nov.
"Toshihiro Sugii,Tatsuya Yamazaki,Tetsu Fukano,Takashi Ito","Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy","Dig. of Symp. on VLSI Tech.","Dig. of Symp. on VLSI Tech.",,,,"pp. 35-36",1987,
"Takashi Ito,Hiroshi Horie,Tetsu Fukano,Hajime Ishikawa","A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode for MOS VLSI Circuits",,"IEE Trans Electron Devices","IEEE Electron Devices Society","Vol. ED-33","No. 4","pp. 464-468",1986,Apr.
"Tetsu Fukano,Takashi Ito,Hajime Ishikawa","Microwave Annealing for Low Temperature VLSI Processing",,"Tech. Dig. of IEDM",,,,"pp. 224-225",1985,
"Takashi Ito,Hiroshi Horie,Tetsu Fukano,Hajime Ishikawa","A Nitride Isolated Molybdenum-Polysilicon Gate Electrode","Dig. of Tech. Papers on 1985 Symp. on VLSI Tech.","Dig. of Tech. Papers on 1985 Symp. on VLSI Tech.",,,,"pp. 60-61",1985,
"Tetsu Fukano,Takashi Ito,Tokushige Hisatsugu,Hajime Ishikawa","Ultra Sharp Trench Capacitors Formed by Peripheral Etching","Ext. Abst. of 16th (1984 International Conf. on SSDM","Ext. Abst. of 16th (1984 International Conf. on SSDM",,,,"pp. 471-472",1984,
"Hiroshi Horie,Tetsu Fukano,Takashi Ito,Hajime Ishikawa","Multiple Self-Alignment MOS Technology (MUSA/MOS)","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 398-401",1984,
"Masao Taguchi,Takashi Ito,Tetsu Fukano,Tetsuo Nakamura,Hajime Ishikawa","Thermal Nitride Capacitors for High Density RAMs","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 400-403",1981,