"Fumitoshi Sugimoto,Yoshihiro Arimoto,Takashi Ito","Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 34","No. 12A","pp. 6314-6320",1995,Dec.
"Fumitoshi Sugimoto,Hiroshi Horie,Yoshihiro Arimoto,Takashi Ito","A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 34","No. 1","pp. 30-35",1995,Jan.
"Hiromasa Hoko,Akira Ohishi,Yoshihiro Arimoto,Takashi Ito","Global Planarization for 4 mm Square Pattern","Dumic Conference","Dumic Conference",,"Vol. 101D","No. 95","pp. 163-167",1995,
"Kenichi Goto,Tatsuya Yamazaki,Yasuo Nara,Tetsu Fukano,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Ti Salicide Process for Sub-quarter-Micron CMOS Devices",,"IEICE TRANSACTIONS on Electronics","The Institute of Electronics, Information and Communication Engineers","Vol. E-77-C","No. 3","pp. 480-485",1994,Mar.
"Kunihiro Suzuki,Tetsu Tanaka,Yoshiharu Tosaka,Hiroshi Horie,Yoshihiro Arimoto,Takashi Ito","Analytical Surface Potential Expression for Thin Film Double-Gate SOI MOSFETs",,"Solid-State Electron","ELSEVIER","Vol. 37","No. 2","pp. 327-332",1994,Feb.
"Takayuki Aoyama,Kunihiro Suzuki,Hiroko Tashiro,Tatsuya Yamazaki,Yoshihiro Arimoto,Takashi Ito","Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 140","No. 12","pp. 3624-3627",1993,Dec.
"Yoshihiro Arimoto,Hiroshi Horie,Naoshi Higaki,Manabu Kojima,Fumitoshi Sugimoto,Takashi Ito","Advanced Metal Oxide Semiconductor and Bipolar Devices on Bonded Silicon-on-Insulators",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 140","No. 4","pp. 1138-1143",1993,Apr.
"Manabu Kojima,Atsushi Fukuroda,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques",,"IEICE TRANSACTIONS on Electronics","The Institute of Electronics, Information and Communication Engineers","Vol. E-76-C","No. 4","pp. 572-576",1993,Apr.
"Akira Sato,Youichi Momiyama,Yasuo Nara,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","A 0.5ƒÊm EEPROM Cell Using Poly-Si TFT Technology","Proc. 5lth Annual Device Research Conference","Proc. 5lth Annual Device Research Conference",,,,,1993,
"Fumio Sugimoto,Hiroshi Horie,Yoshihiro Arimoto,Takashi Ito","A pH-  Controlled Chemical Mechanical Polishing Method for Ultra-Thin Bonded SOI  Wafer","Dig. of Tech. Papers, Symp. on VLSI Tech.","Dig. of Tech. Papers, Symp. on VLSI Tech.",,,,"pp. 113-114",1993,
"Kunihiro Suzuki,Tetsu Tanaka,Hiroshi Horie,Yoshihiro Arimoto,Takashi Ito","Analytical Surface Potential Expression for Double-Gate SOI MOS FETS","Proc. Int. Workshop on VLSI Process and Device Modeling","Proc. Int. Workshop on VLSI Process and Device Modeling",,,,"pp. 150-151",1993,
"Norio Miyata,Tatsuya Yamazaki,Yoshihiro Arimoto,Takashi Ito","Intermittent Ultraviolet lrradiation for Silicon Selective Epitaxial Growth",,"Applied Phisics Letters","American Institute of Physics","Vol. 62","No. 8","pp. 588-590",1992,Dec.
"Takashi Ito,Rinshi Sugino,Yasuhiro Sato,Masaki Okuno,Akira Osawa,Takayuki Aoyama,Tatsuya Yamazaki,Yoshihiro Arimoto","Photo-Excited Cleaning of Silicon with Chlorine and Fluorine","MRS Symp. Proceeding","MRS Symp. Proceeding",,,,,1992,
"Toshihiro Sugii,Tatsuya Yamazaki,Yoshihiro Arimoto,Takashi Ito,Yuji Furumura,Ikuo.Namura,Hiroshi Goto,Toshiya Tahara","SiC Growth and its Application  to High Speed Si-HBTs",,"Microelectronic Engineering","ELSEVIER","Vol. 19",,"pp. 335-342",1992,
"Yoshihiro Arimoto,Shinpei Hijiya,Takashi Ito","Advanced Bipolar and MOS  Devices Based on Silicon Wafer-Bonding","Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS","Proc. 1st. Int. Symp. on Semicon. Wafer Bonding, ECS",,,,"pp. 414-426",1992,
"Atsushi Fukuroda,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Si Wafer Bonding with Ta Silicide Formation",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 30","No. 10A","pp. L1693-L1695",1991,Oct.
"Naoshi Higaki,Tetsu Fukano,Atsushi Fukuroda,Toshihiro Sugii,Yoshihiro   Arimoto,Takashi Ito","A Thin-Base Lateral Bipolar Transistor Fabricated on   Bonded SOI","Dig. Tech. Papers of Symp. on VLSI Tech.","Dig. Tech. Papers of Symp. on VLSI Tech.",,,,"pp. 53-54",1991,
"Manabu Kojim,Atsushi Fukuroda,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","High-Speed Epitaxial Base Transistors on Bonded SOI","IEEE 1991 ,Bipolar Circuits and Technology Meeting","IEEE 1991 ,Bipolar Circuits and Technology Meeting",,,,"pp. 63-66",1991,
"Atsushi Fukuroda,Toru Miyabo,Manabu Kojima,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor","Ext. Abst. of Int. Conf. on SSDM","Ext. Abst. of Int. Conf. on SSDM",,,,"pp. 168-169",1991,