"���R����,M. Casse,R. Coquand,S. Barraud,C. Vizioz,C. Comboroure,P. Perreau,V. Maffini-Alvaro,C. Tabone,,L. Tosti,S. Barnola,V. Delaye,F. Aussenac,G. Ghibaudo,HIROSHI IWAI,G. Reimbold","Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs",,"Solid-State Electronics",,"Vol. 84",,"pp. 46-52",2013,June