"Kazuma Terayama,’†“‡ บ,ผเVLˆ๊,‘ๅ‹ดO’ส,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI,HIROSHI IWAI","Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"—ซ เ๗ฝ,’†“‡ บ,Kuniyuki KAKUSHIMA,T. Makino,M. Ogura,ผเVLˆ๊,HIROSHI IWAI,‘ๅ‹ดO’ส","A study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarizationn","P. Liu, A. Nakajima, K. Kakushima, T. Makino, M. Ogura, S. Nishizawa, H. Iwai, H. Ohashi, gA study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarizationh, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan",,,,,,2014,
"Hiroaki Yonezawa,Rei Kayanuma,’†“‡ บ,ผเVLˆ๊,‘ๅ‹ดO’ส,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,HIROSHI IWAI","AlGaN/GaN-based p-channel HFETs with wide-operating temperature","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"•ฤเVGบ,Šžภ—ๅ,’†“‡ บ,ผเVLˆ๊,‘ๅ‹ดO’ส,“›ˆไˆ๊ถ,Šp“ˆ–M”V,Žแ—ัฎ,Šโˆไ—m","L‚ข‰ท“x”อˆอ‚ล“ฎ์‚ท‚้AlGaN/GaNŒnPƒ`ƒƒƒlƒ‹Œ^HFET","‘ๆ61‰๑‰ž—p•จ—Šw‰๏t‹GŠwpu‰‰‰๏",,,,,,2014,
"’†“‡ บ,Hiroaki Yonezawa,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,ผเVLˆ๊,‘ๅ‹ดO’ส,Hitoshi Wakabayashi,HIROSHI IWAI","One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors","The 26th International Symposium on Power Semiconductor Devices and ICs(ISPSD 2014)",,,,,,2014,
"Ž›ŽRˆ๊^,’†“‡ บ,ผเVLˆ๊,‘ๅ‹ดO’ส,Šp“ˆ–M”V,Žแ—ัฎ,“›ˆไˆ๊ถ,Šโˆไ—m","ƒfƒoƒCƒXƒVƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“‚ษ‚ๆ‚้‰กŒ^GaNƒpƒ[ƒfƒoƒCƒX‚ฬ‹ษŒภƒIƒ“’๏R‚ฬŽŽŽZ","‘ๆ61‰๑‰ž—p•จ—Šw‰๏t‹GŠwpu‰‰‰๏",,,,,,2014,
"•ฤเVGบ,’†“‡  บ,ผเV Lˆ๊,‘ๅ‹ด O’ส,“›ˆไˆ๊ถ,Šp“ˆ–M”V,Žแ—ัฎ,Šโˆไ—m","AlGaN/GaNŒnpƒ`ƒƒƒ“ƒlƒ‹HFET‚ฬป์","‘ๆ74‰๑‰ž—p•จ—Šw‰๏H‹GŠwpu‰‰‰๏",,,,,,2013,