"諸澤篤志,金澤徹,藤井諒,和田宇史,渡辺正裕,浅田雅洋","ナノ領域成長によるSi(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの微分負性抵抗特性","第66回応用物理学会学術講演会",,,"  9a-W-7","  3","  1215",2005,Sept.
"金澤徹,諸澤篤志,藤井諒,和田宇史,渡辺正裕,浅田雅洋","Si(100)基板上CaF<sub>2</sub>/CdF<sub>2</sub>/CaF<sub>2</sub>量子井戸構造の成長温度依存性","第66回応用物理学会学術講演会",,,"  9a-W-5","  3","  1214",2005,Sept.
"渡辺正裕,田村信平,金澤徹,自念圭輔,浅田雅洋","ローカルエピタキシー法によるCoSi<sub>2</sub>/CaF<sub>2</sub>三重障壁共鳴トンネルダイオードの微分負性抵抗特性","電子情報通信学会（電子デバイス研究会）",,,"  ED2004-227","  SDM2004-222","  7-10",2005,Jan.
"渡辺正裕,金澤徹,自念圭輔,浅田雅洋","Si(100)基板上に形成されたCdF<sub>2</sub>/CaF<sub>2</sub>超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性","電子情報通信学会（電子デバイス研究会）",,,"  ED2003-231","  SDM2003-217","  25-28",2004,Feb.
"渡辺正裕,松田克己,藤岡裕智,金澤徹,浅田雅洋","ローカルエピタキシー法により形成されたシリコン基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの微分負性抵抗特性の構造依存性","電子情報通信学会（電子デバイス研究会）",,,"  ED2002-287","  SDM2002-250","  33-38",2003,Feb.
"松田克己,金澤徹,渡辺正裕,浅田雅洋","CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオード微分負性抵抗特性の量子井戸厚依存性","第63回応用物理学会学術講演会",,,"  25p-P9-11","  3","  1203",2002,Sept.
"Masahiro Watanabe,Tatsuya Ishikawa,Masaki Matsuda,THORU KANAZAWA,MASAHIRO ASADA","Room Temperature Negative Differential Resistance of CdF<sub>2</sub>/CaF<sub>2</sub> Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy","44th 2002 Electronic Materials Conference","44th 2002 Electronic Materials Conference, Z5",,"Vol. Z5",,"pp. 54-55",2002,June
"金澤徹,松田克己,石川達也,金澤徹,渡辺正裕,浅田雅洋","Si(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオードの作製と評価","第49回応用物理学会関係連合講演会",,,"  27p-YH-3","  3","  1374",2002,Mar.
"渡辺正裕,石川達也,松田克己,金澤徹,浅田雅洋","ナノ領域成長によるSi(111)及びSi(100)基板上CdF<sub>2</sub>/CaF<sub>2</sub>共鳴トンネルダイオード","電子情報通信学会（電子デバイス研究会）",,,"  ED2001-242","  SDM2001-245","  65-70",2002,Jan.