"¡•Ê•{Gs,‘哇Fm,•ž•”^ˆË,’†’J “¹l,{ŽR •q®,‹g¼ Œö•½,‘å—F –¾","—§•û»Mgx Zn1|x O ¬»”––Œ‚¨‚æ‚Ñ’´ŠiŽq\‘¢‚Ì[Ž‡ŠOCL ”Œõ“Á«","‘æ77‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï",,,,,,2016,Sept.
"Œüˆä Í,‘哇 Fm,‹g¼ Œö•½,“¡ˆä r•ã,{ŽR •q®,‘å—F –¾","LaGaO3ƒGƒsƒ^ƒLƒVƒƒƒ‹”––Œ‚̬’·‚Æ[Ž‡ŠOƒJƒ\[ƒhƒ‹ƒ~ƒlƒbƒZƒ“ƒX“Á«•]‰¿","‘æ75‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï",,,,,,2014,Sept.
"M. Niwa,A. Mukai,T. Oshima,T. Nagami,T. Suyama,A. Ohtomo","Epitaxial growth of ZnGa2O4 films by mist chemical vapor deposition","The Eighth International Conference on the Science and Technology for Advanced Ceramics",,,,,,2014,June
"T. Oshima,M. Niwa,A. Mukai,T. Nagami,T. Suyama,A. Ohtomo","Epitaxial growth of wide-band-gap ZnGa2O4 films","The 41th International Symposium on Compound Semiconductor",,,,,,2014,May
"T. Oshima,M. Niwa,A. Mukai,T. Nagami,T. Suyama,A. Ohtomo","Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition",,"Journal of Crystal Growth","Elsevier","Volume 386",,"Page 190-193",2014,Jan.
"’O‰H ŽO“~,Œüˆä Í,‘哇 Fm,’·Œ© ’mŽj,{ŽR •q®,‘å—F –¾","ƒ~ƒXƒgCVD–@‚É‚æ‚éZnGa2O4”––Œ‚̃Gƒsƒ^ƒLƒVƒƒƒ‹¬’·","‘æ74‰ñ‰ž—p•¨—Šw‰ïH‹GŠwpu‰‰‰ï",,,,,,2013,Sept.