"牛島和樹,葛本昌樹,萩原誠,滕飛,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5 kV耐圧SiC-MOSFETのデバイスモデルを用いた並列駆動動作に関する一検討","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-20-048",2020,Jan.
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5kV耐圧SiC-MOSFETのデバイスモデル開発","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-19-068",2019,Oct.
"Yasushige Mukunoki,Takeshi Horiguchi,Hiroshi Nakatake,Masaki Kuzumoto,Makoto Hagiwara,Hirofumi Akagi","Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET","2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)",,"IEEE",,,,2019,May
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,椋木康滋,堀口剛司","6.5kV耐圧SiC-MOSFETの出力特性モデリング","平成31年電気学会全国大会",,,,"  4-013","pp. 20-21",2019,Mar.
"Y. Mukunoki,K. Konno,T. Horiguchi,A. Nishizawa,M. Kuzumoto,M. Hagiwara,H. Akagi","An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation",,"IEEE Transactions on Power Electronics",,"Vol. 33","No. 11","pp. 9834-9842",2018,Nov.
"椋木康滋,堀口剛司,葛本昌樹,萩原誠,赤木泰文","SiC-MOSFETデバイスモデルの開発","平成30年電気学会産業応用部門大会",,,,"  7-1","pp. VII-1",2018,Aug.
"松尾翼,昆野賢太郎,葛本昌樹,萩原誠,赤木泰文,椋木康滋,堀口剛司,中武浩","SiC-MOSFETデバイスモデルによる高周波漏洩電流の解析","平成30年電気学会全国大会",,,,"  4-112","pp. 181-182",2018,Mar.
"松尾翼,昆野賢太郎,葛本昌樹,萩原誠,赤木泰文,椋木康滋,堀口剛司,中山靖","双方向絶縁形DC-DCコンバータにおけるSiC-MOSFETのソフトスイッチング特性解析","平成29年電気学会産業応用部門大会",,,,"  1-134","pp. I-585-I-586",2017,Aug.