"K. Terayama,A. Nakajima,S. Nishizawa,H. Ohasi,K. Kakushima,H. Wakabayashi,K. Tsutsui,H. Iwai","Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Y. Ito,H. Hori,K. Tsutsui,K. Kakushima,H. Wakabayashi,Y.Kataoka,A.Nishiyama,N. Sugii,K. Natori,H. Iwai","Proposal of junction formation process for solar cells made of silicon microstructures","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"M. Kamiya,Y. Takei,W. Saito,K. Kakushima,H. Wakabayashi,Y. Kataoka,K. Tsutsui,H. Iwai","Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"T. Kato,T.Inamura,A.Sasaki,K.Aoki,K.Kakushima,Y.Kataoka,A. Nishiyama,N. Sugii,H.Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Thickness-dependent electrical characterization of ���]FeSi2","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Minjae Yoon,K. Terayama,A. Nakajima,S. Nichizawa,H. Ohasi,K. Kakushima,H. Wakabayashi,K. Tsutsui,H. Iwai","Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"M. Motoki,K. Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H.Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama",,,,,,2014,Feb.
"T. Ohashi,H. Wakabayashi,K. Kakushima,N. Sugii,A. Nishiyama,Y. Kataoka,K. Natori,K. Tsutsui,H. Iwai","Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"H. Hasegawa,Y.Wu,J.Song,K. Kakushima,Y.Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Y. Nakamura,K. Kakushima,Y. Kataoka,A. Nishiyama,H. Wakabayashi,N. Sugii,K. Tsutsui,K. Natori,H. Iwai","Measurement of flat-band voltage shift using multi-stacked dielectric film","The Workshop on Future Trend of Nanoelectronics: WIMNACT",,,,,,2014,Feb.
"M. Okamoto,K. Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,H. Iwai,W. Saito","An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Chunmeng Dou,Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"T. Seki,T. Kawanago,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Electrical and Infrared Absorption Studies on La-silicate/Si Interface","IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013)",,,,,,2013,Feb.
"Y. Tanaka,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,S. Yamasaki,H. Iwai","TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal","PRiME 2012",,,,,,2012,Oct.
"T. Kamale,R. Tan,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","PRiME 2012",,,,,,2012,Oct.
"S. Kano,C. Dou,M. Hadi,K. Kakushima,P. Ahmet,A. Nishiyama,N. Sugii,K. Tsutsui,Y. Kataoka,K. Natori,E. Miranda,T. Hattori,H. Iwai","Influence of Electrode Material for CaOx Based Resistive Switching","China Semiconductor Technology International Conference (CSTIC)",,,,,,2012,Mar.
"T. Kawanago,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture","42nd European Solid-State Device Research Conference (ESSDERC 2012)",,,,,,2012,
"K. Kakushima,J. Kanehara,Y. Izumi,T. Muro,T. Kinoshita,P. Ahmet,K. Tsutsui,T. Hattori,H. Iwai","Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy","2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011)",,,,,,2011,Sept.
"D. Kitayama,T. Koyanagi,K. Kakushima,P. Ahmet,K. Tsutsui,A. Nishiyama,N. Sugii,K. Natori,T. Hattori,H. Iwai","TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT","218th ECS Meeting",,,,,,2010,Oct.
"H. Nakayama,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,T. Hattori,H. Iwai","Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation","216th ECS Meeting",,,,,,2009,
"K. Noguchi,W. Hosoda,K. Matano,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Chandorkar,T. Hattori,H. Iwai","Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"B. Mizuno,Y. Sasaki,C. G. Jin,K. Okashita,K. Nakamoto,T. Kitaoka,K. Tsutsui,H. A. Sauddin,H. Iwai","Production-worthy approach of Plasma Doping (PD)","The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008)",,,,,,2008,Oct.
"M. Hino,K. Nagata,T. Yoshida,D. Kosemura,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Ogura,T. Hattori,H. Iwai","Study on Stress Memorization by Argon Implantation and Annealing","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"K. Kakushima,K. Okamoto,K. Tachi,S. Sato,J. Song,T. Kawanago,P. Ahmet,N. Sugii,K. Tsutsui,T. Hattori,H. Iwai","Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"M. Kouda,K. Tachi,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Chandorkar,T. Hattori,H. Iwai","Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"H. Nohira,Y. Takenaga,K. Kakushima,P. Ahmet,K. Tsutsui,H. Iwai","Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"K. Okamoto,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Chandorkar,T. Hattori,H. Iwai","0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"Y. Kobayashi,A. B. Sachid,K. Tsutsui,K. Kakushima,P. Ahmet,V. R. Rao,H. Iwai","Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"Y. Kobayashi,K. Tsutsui,K. Kakushima,P. Ahmet,V. R. Rao,H. Iwai","Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects","Int. Conf. on Solid State Devices and Materials (SSDM2008)",,,,,,2008,Sept.
"K. Tsutsui,M. Watanabe,Y. Nakagawa,T. Matsuda,Y. Yoshida,E. Ikenaga,K. Kakushima,P. Ahmet,H. Nohira,T. Maruizumi,A. Ogura,T. Hattori,H. Iwai","New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"K. Kakushima,K. Tachi,M. Adachi,K. Okamoto,S. Sato,J. Song,T. Kawanago,P. Ahmet,K. Tsutsui,N. Sugii,T. Hattori,H. Iwai","Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"K. Tsutsui,T. Shiozawa,K. Nagahiro,Y. Ohishi,K. Kakushima,P. Ahmet,N. Urushihara,M. Suzuki,H. Iwai","Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si","213th ECS Meeting",,,,,,2008,May
"K. Kakushima,K. Okamoto,M. Adachi,K. Tachi,S. Sato,T. Kawanago,J. Song,P. Ahmet,N. Sugii,K. Tsutsui,T. Hattori,H. Iwai","Impact of Thin La2O3 Insertion for HfO2 MOSFET","213th ECS Meeting",,,,,,2008,May
"Y. Kobayashi,K. Tsutsui,K. Kakushima,V. Hariharan,V. R. Rao,P. Ahmet,H. Iwai","Parasitic Effects Depending on Shape of Spacer Region on FinFETs","211th ECS Meeting",,,,,,2007,May
"K. Tachi,H. Iwai,T. Hattori,N. Sugii,K. Tsutsui,P. Ahemt,K. Kakushima","Effect of Oxygen for Ultra-Thin La2O3 Film Deposition","2006 Joint International Meeting of ECS",,,,,,2006,Oct.
"Y. Shiino,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,T. Hattori,H. Iwai","La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing","2006 Joint International Meeting of ECS",,,,,,2006,Oct.
"H. Sauddin,Y. Sasaki,H. Ito,B. Mizuno,P. Ahmet,K. Kakushima,N. Sugii,K. Tsutsui,H. Iwai","Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping","2006 Joint International Meeting of ECS",,,,,,2006,Oct.
"H. Nohira,T. Matsuda,K. Tachi,Y. Shiino,J. Song,Y. Kuroki,J. Ng,P. Ahmet,K. Kakushima,K. Tsutsui,E. Ikenaga,K. Kobayashi,H. Iwai,T. Hattori","Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer","2006 Joint International Meeting of ECS",,,,,,2006,Oct.
"Y. Sasaki,H. Ito,K. Okashita,H. Tamura,C. G. Jin,B. Mizuno,T. Okumura,I. Aiba,Y. Fukagawa,H. Sauddin,K. Tsutsui,H. Iwai","Production-worthy USJ formation by self-regulatory plasma doping method","IIT2006",,,,,,2006,
"Y. Kim,A. Kuriyama,I. Ueda,S. Ohmi,K. Tsutsui,H. Iwai","Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method","204th ECS symposium",,,,,,2003,Oct.
"Y. Sasaki,B. Mizuno,S. Akama,R. Higaki,K. Tsutsui,S. Ohmi,H. Iwai","Helicon Wave Plasma Doping System","3rd International Workshop on Junction Technology (IWJT2002)",,,,,,2002,Dec.
"Y. Sasaki,B. Mizuno,S. Akama,R. Higaki,K. Tsutsui,S. Ohmi,H. Iwai","Gas Phase Doping at Room Temperature","3rd International Workshop on Junction Technology (IWJT2002)",,,,,,2002,Dec.