""K. Tuokedaerhan","R. Tan,K. Kakushima","P. Ahmet","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","T. Hattori","H. Iwai"","Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application",,"Applied Physics Letters (APL)",,"Vol. 103",,,2013,Sept.
"T. Kamale,R. Tan,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","PRiME 2012",,,,,,2012,Oct.