"Ryo Ikoma,Takamasa Kawanago,Yukio Kawano","Heavily-doped SOI with SAM-Based Gate Dielectrics in Application to TMDC FET","232nd ECS Meeting",,,,,,2017,Oct.
"居駒遼,川那子高暢,河野行雄","剥離転写法による高濃度ドープSOI基板を用いたTMDC-FETの作製","第７８回応用物理学会秋季学術講演",,,,,,2017,Sept.
"川那??暢,居駒遼,Du Wanjing,??俊理","??組織化単分?膜を?いたadhesion lithographyによるMoS2 FETの作製","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"河野行雄,居駒遼,川那子高暢,小田俊理","ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜の用いたMoS2 FETの作製","第７７回応用物理学会秋季学術講演",,,,,,2016,Sept.