"K. Terayama,A. Nakajima,S. Nishizawa,H. Ohasi,K. Kakushima,H. Wakabayashi,K. Tsutsui,H. Iwai","Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Minjae Yoon,K. Terayama,A. Nakajima,S. Nichizawa,H. Ohasi,K. Kakushima,H. Wakabayashi,K. Tsutsui,H. Iwai","Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"寺山一真,中島 昭,西澤伸一,大橋弘通,角嶋邦之,若林整,筒井一生,岩井洋","デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算","第61回応用物理学会春季学術講演会",,,,,,2014,
"Yoon Minjae,寺山一真,中島 昭,西澤伸一,大橋弘通,角嶋邦之,若林整,筒井一生,岩井洋","デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証","第61回応用物理学会春季学術講演会",,,,,,2014,
"Kazuma Terayama,中島 昭,西澤伸一,大橋弘通,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI,HIROSHI IWAI","Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"武井優典,神谷真行,寺山一真,米澤宏昭,齋藤 渉,筒井一生,角嶋邦之,若林整,片岡好則,岩井洋","AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"神谷真行,寺山一真,武井優典,齋藤 渉,角嶋邦之,若林整,片岡好則,筒井一生,岩井洋","AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性","第74回応用物理学会秋季学術講演会",,,,,,2013,