"岩田 真次郎,大橋 一水,祢津 誠晃,福田 浩一,宮本 恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-6",2018,Sept.
"木瀬 信和,岩田 真次郎,青沼 遼介,宮本 恭幸","[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,,"  C804",,2017,May
"青沼遼介,岩田真次郎,木瀬信和,宮本恭幸","68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET","電気学会電子デバイス研究会",,,,,"  EDD-17-051",2017,Mar.
"岩田 真次郎,木瀬 信和,青沼 遼介,宮本 恭幸","[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Y. Miyamoto,W. Lin,S.Iwata,K. Fukuda","Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)","The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)",,,,,"  A6-I-01",2016,July
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,Yasuyuki Miyamoto","Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070303",2016,June
"岩田 真次郎,大橋 一水,林 文博,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性",,"電気学会論文誌C",,"Vol. 136","no. 4","pp. 467-473",2016,Apr.
"林 文博,岩田 真次郎,福田 浩一,宮本 恭幸","短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"S. Iwata,W. Lin,K. Fukuda,Y. Miyamoto","Design of drain for low off current in GaAsSb/InGaAs tunnel FETs","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Y. Miyamoto,M. Fujimatsu,K. Ohashi,A. Yukimachi,S. Iwata","Steep subthreshold slope in InGaAs MOSFET","SemiconNano2015",,,,,,2015,Sept.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"K. Ohashi,M. Fujimatsu,S. Iwata,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs",,"Jpn. J. Appl.Phys.",,"Vol. 54","Number 4S",,2015,Apr.
"岩田真次郎,大橋一水,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性","電子情報通信学会 総合大会",,,,,,2015,Mar.