"Takuya Hamada,Hayato Mukai,Tokio Takahashi,Toshihide Ide,Mitsuaki Shimizu,Hiroki Kuroiwa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Kazuo Tsutsui","Electrical properties of selectively grown GaN channel for FinFETs","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.