"Takaaki Kaneko,Takumi Yoshida,Shotaro Tadano,Nobuhiko Nishiyama,SHIGEHISA ARAI","Improvement in the current-gain of a 1.3-?m npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070301-1-070301-4",2016,June "只野翔太郎,吉田匠,金子貴晃,西山伸彦,荒井滋久","薄膜化したp-GaInAsPベース層を有する 1.3-μm帯npn-AlGaInAs/InP トランジスタレーザの発振特性","第76回応用物理学会秋季学術講演会",,,,"No. 16p-2E-3",,2015,Sept. "金子貴晃,吉田匠,只野翔太郎,西山伸彦,荒井滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザにおけるコレクタ-ベース間電圧変調動作特性","電子情報通信学会 2015年ソサイエティ大会",,,,"No. C4-2",,2015,Sept. "Takaaki Kaneko,Takumi Yoshida,Shotaro Tadano,Nobuhiko Nishiyama,SHIGEHISA ARAI","Dynamic Behavior of 1.3-μm npn-AlGaInAs/InP Transistor Lasers under Collector-Base Voltage Loss-modulation","The 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2015)",,,,"No. 26J2-2",,2015,Aug. "Takaaki Kaneko,Takumi Yoshida,Shotaro Tadano,Nobuhiko Nishiyama,Shigehisa Arai","Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Thin Current Injection Base Layer","Compound Semiconductor Week 2015, 27th International Conference on Indium Phosphide and Related Materials.",,,,"No. O6.4",,2015,June "只野翔太郎,吉田匠,金子貴晃,西山伸彦,荒井滋久","1.3 μm 帯 npn-AlGaInAs/InP トランジスタレーザにおける ベース層薄膜化によるキャリア引き抜き量の向上","電子情報通信学会 光エレクトロニクス(OPE)研究会 2015年度4月研究会",,," P2"," 7",,2015,Apr. "Takumi Yoshida,Takaaki Kaneko,Masashi Yukinari,Nobuhiko Nishiyama,SHIGEHISA ARAI","Lasing characteristics of 1.3-?m npn-AlGaInAs/InP Transistor Laser - dependence of the base layer structure","Compound Semiconductor Week 2014, 26th International Conference on Indium Phosphide and Related Materials.",,," Mo"," B2"," 1",2014,May "金子貴晃,行成元志,吉田匠,西山伸彦,荒井滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザにおける ベース層構造の変更による発振特性の改善","電子情報通信学会 光エレクトロニクス(OPE)研究会 2014年度4月研究会",,,,,,2014,Apr. "金子貴晃,行成元志,吉田匠,西山伸彦,荒井滋久","1.3μm帯npn-AlGaInAs/InPトランジスタレーザ発振特性の ベース層構造依存性","電子情報通信学会 2014年総合大会",,," C-4-31",,,2014,Mar. "吉田匠,行成元志,金子貴晃,西山伸彦,荒井滋久","ベース層の広禁制帯幅化による1.3 ?m帯npn-AlGaInAs/InP トランジスタレーザの発振特性改善","第3回IPDA研究会",,," P03",,,2014,Jan.