"�D“c�F�K,’·”ö�r—C,�ù�ì’¼Šó,‘å“à‘ñŽÀ,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-Ag Šî”Â�ã‚ÌBi’´”––Œ‚Ì•\–Ê�\‘¢‚Æ“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï2024”N�t‹G‘å‰ï",,,,,,2024,Mar.
"’·”ö�r—C,‘å“à‘ñŽÀ,‰Z�¶“µ”ü,�D“c�F�K,”Ñ�·‘ñŽk,�¬�X•¶•v,’†’ÒŠ°,•½ŽR”Ž”V","Si(111)�ã3�~�ã3-Ag •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï2023”N�t‹G‘å‰ï",,,,,,2023,Mar.
"‘å“à‘ñŽÀ,’·”ö�r—S,’†‘º—æ—Y,’|‘º�Wˆê,Žu‘º•‘–],’ª“c—º‘¾,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-B •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô‚É‚¨‚¯‚éŠî”ˆˑ¶�«","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2022,Mar.
"�XˆäŽµ�¶,‰i—FŒc,’|‘º�Wˆê,‘å“à‘ñŽÀ,‰Z�¶“µ”ü,’·”ö�r—C,‰Í“Y—�‰›,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Cu(001)c(4�~2)-Bi•\–Ê‚Ì“dŽq�ó‘Ô","2021”N“ú–{•\–Ê�^‹óŠw‰ïŠw�p�u‰‰‰ï",,,,,,2021,Nov.
"‘å“à‘ñŽÀ,’†‘º—æ—Y,’|‘º�Wˆê,Žu‘º•‘–],’ª“c—º‘¾,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-B•\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","2021”N“ú–{•\–Ê�^‹óŠw‰ïŠw�p�u‰‰‰ï",,,,,,2021,Nov.
"N. Morii,K. Nagatomo,K. Takemura,T. Ouchi,H. Uryu,S. Nagao,R. Kawazoe,T. Iimori,F. Komori,H. Hirayama,K. Nakatsuji","Electronic structure of Cu(001)c(4�~2)-Bi surface","13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC�f21)",,,,,,2021,Oct.
"T. Ouchi,L. Nakamura,K. Takemura,M. Shimura,R. Ushioda,T. Iimori,F. Komori,H. Hirayama,K. Nakatsuji","Electronic structure of Bi(110) ultra-thin films grown on n-type Si(111)�ã3�~�ã3-B substrates","13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC�f21)",,,,,,2021,Oct.
"�Ÿ–“˜B,’†‘º—æ—Y,‹à–ì’B,–Ø‘º�²”Ž,‘å“à‘ñŽÀ,‰i—FŒc,“c’†˜a–ç,‰º�ì—T—�,�¬àVŒ’ˆê,ŠÔ�£ˆê•F,�¬�X•¶•v,”Ñ�·‘ñŽk,•½ŽR”Ž”V,’†’ÒŠ°","Si(111)�ã3�~�ã3-(Bi,In)•\–Ê‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2021,Mar.
"�”ŠÑ —º‘¾,‘å“à ‘ñŽÀ,‰i—F Œc,�Xˆä Žµ�¶,‹à–ì ’B,”’àV “O˜Y,•½ŽR ”Ž”V,’†’Ò Š°","Si(110)3�~2-Bi•\–Ê‚Ì�\‘¢‰ð�Í","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2021,Mar.
"’†‘º—æ—Y,�Ÿ–“˜B,’ª“c—º‘¾,‘å“à‘ñŽÀ,�¬�X•¶•v,”Ñ�·‘ñŽk,•½ŽR”Ž ”V,’†’ÒŠ°","n-type Si(111)�ã3�~�ã3-B •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï‘æ76‰ñ”NŽŸ‘å‰ï",,,,,,2021,Mar.