"Tasuku Kaneda,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 157-164",2013,
"Takuya Suzuki,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Miyuki Kouda,鈴木 拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,安田哲二","Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition",,"Japanese Journal of Applied Physics",,"Vol. 51",,"pp. 121101-1-121101-5,",2012,Dec.
"マイマイティ マイマイティレャアティ,Miyuki Kouda,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,片岡好則,西山彰,KAZUO TSUTSUI,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Valance number transition and silicate formation of cerrium oxide on Si(100)",,"Vacuum",,"Vol. 86","No. 10","pp. 1513-1516",2012,Apr.
"マイマイティ マイマイティレャアティ,Miyuki Kouda,Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,片岡 好則,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs",,"Semiconductor Science and Technology",,"Vol. 27","No. 4",,2012,Mar.
"Miyuki Kouda,鈴木 拓也,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI","Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"鈴木 拓也,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Miyuki Kouda,Takamasa Kawanago,Ahmet Parhat,KENJI NATORI,takeo hattori,HIROSHI IWAI","Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices",,"Journal of Vacuum Science and Technology B",,"Vol. 29","No. 6","pp. 062202-1-4",2011,Nov.
"Miyuki Kouda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,ト部友二,安田哲二","Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA06-1-4",2011,Oct.
"Miyuki Kouda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,ト部友二,安田哲二","Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA06-1-4",2011,Oct.
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA04-1-4",2011,Oct.
"K. Shubhakar,K.L. Pey,S.S. Kushvaha,S.J. O'Shea,N. Raghavan,M. Bosman,Miyuki Kouda,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy",,"Applied Physics Letters",,"Vol. 98","No. 072902",,2011,Feb.
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics","ECS  220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 119-124",2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics","ECS  220th Meeting,ECS Transactions","ECS Transactions",,"Vol. 41","No. 7","pp. 119-124",2011,
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較","ゲートスタック研究会?材料･プロセス・評価の物理?（第16回研究会）",,,,,,2011,
"常石佳奈,来山大祐,幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性","第72回応用物理学会学術講演会",,,,,,2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"鈴木 拓也,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,安田哲二","ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価","第72回応用物理学会学術講演会",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High ?k Gate Stacks",",219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm","CSTIC2011",,,,,,2011,
"金田翼,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effect of rare earth oxide capping for La-based gate oxides","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"Kenji Ozawa,Miyuki Kouda,Y. Urabe,T. Yasuda,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI","La2O3  insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties","ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010",,,,,,2010,Nov.
"Ahmet Parhat,来山大祐,金田 翼,鈴木  拓也,Tomotsune Koyanagi,Miyuki Kouda,M. Mamatrishat,Takamasa Kawanago,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Scaling of EOT Beyond 0.5nm","ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010",,,,,,2010,Nov.
"M. Mamatrishat,Miyuki Kouda,Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,A. Aierken,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,HIROSHI IWAI","Effect of Remote-Surface ?Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics","ECS 218th Meeting",,,,,,2010,Oct.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of rare earth silicates for highly scaled gate dielectrics",,"Microelectronic Engineering",,"Vol. 87","No. 10","pp. 1868-1871",2010,Oct.
"幸田みゆき,小澤健児,角嶋邦之,パールハットアヘメト,岩井洋,ト部 友二,安田 哲二","CVD法によるCeOx絶縁膜の作製と特性評価","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"金田翼,幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"角嶋邦之,小柳友常,来山大祐,幸田みゆき,宋在烈,佐藤創志,川那子高暢,M. マイマイティ,舘喜一,M.K. Bera,パールハットアヘメト,野平博司,筒井一生,西山彰,杉井信之,名取研二,服部健雄,山田啓作,岩井洋","LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御","応用物理学会分科会 シリコンテクノロジー","，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）",,,"No. 127","pp. 4-8",2010,July
"Kuniyuki KAKUSHIMA,Tomotsune Koyanagi,来山大祐,Miyuki Kouda,Jaeyeol Song,Takamasa Kawanago,M. Mamatrishat,Kiichi Tachi,M. K. Bera,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,Keisaku Yamada,HIROSHI IWAI","Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability","2010 Symposium on VLSI Technology",,,,,,2010,June
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","La2O3 MOSFETへのCeOxキャップによる電気特性の改善","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-096",2010,Mar.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","SrO capping effect for La2O3/ Ce-Silicate gate dielectrics",,"Microelectronics Reliability 50",,,,"pp. 356-359",2010,Mar.
"幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","希土類酸化物をキャップすることによるMOSFETの電気特性の改善","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-097",2010,Mar.
"Katuya Matano,Kiyohisa Funamizu,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric","China Semiconductor Technology International Conference",,"[",,,"pp. 1129-1134",2010,Mar.
"金田翼,幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Effect of Rare Earth Oxide Capping for La-based Gate Oxides","複合創造領域シンポジウム",,,,,,2010,
"幸田みゆき,小澤健児,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","Electrical characterization of CVD deposited Ce oxides","複合創造領域シンポジウム",,,,,,2010,
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","Self-limited growth of La oxides with ALD","複合創造領域シンポジウム",,,,,,2010,
"Hiroshi Nohira,Yoichiro Kon,Koji Kitamura,Miyuki Kouda,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure","ECS 216th Meeting",,,"vol. 25","No. 6","pp. 321-326",2009,Oct.
"Miyuki Kouda,Naoto Umezawa,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,Kenji Shiraishi,知京豊裕,Keisaku Yamada,HIROSHI IWAI","Charged defects reduction in gate insulator with multivalent materials","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"M.Mamatrishat,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Kiichi Tachi,Miyuki Kouda,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm","ESSDERC 2009, 39th European Solid-State Device Research Conference",,,,,"p. 403",2009,Sept.
"M.Mamatrishat,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks","ECS 216th Meeting",,,"vol. 25","No. 7","pp. 253-257",2009,Sept.
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Naoto Umezawa,Ahmet Parhat,Kenji Shiraishi,Toyohiro Chikyow,Keisaku Yamada,HIROSHI IWAI","Charged defects reduction in gate insulator with multivalent materials","2009 Symposium on VLSI Technology","2009 Symposium on VLSI Technology Digest of Technical Papers","VLSI Technology",,,"pp. 200-201",2009,June
"野平博司,今陽一郎,北村幸司,幸田みゆき,角嶋邦之,岩井 洋","CeO2 /La2O3/Si(100)構造の熱安定性(2)","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 853",2009,Mar.
"幸田みゆき,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 854",2009,Mar.
"幸田みゆき,梅澤直人,角嶋邦之,パールハットアヘメト,白石賢二,知京豊裕,山田啓作,岩井洋,服部健雄","低電子揺動Ce酸化物を利用したhigh?k膜中の固定電荷の抑制","応用物理学会 薄膜･表面物理分科会/シリコンテクノロジー分科会共催特別研究会 ゲートスタック研究会?材料･プロセス・評価の物理?（第14回研究会）","ゲートスタック研究会?材料･プロセス・評価の物理?（第14回研究会）","ゲートスタック研究会",,,"pp. 21",2009,Jan.
"M. Kouda,K. Tachi,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Chandorkar,T. Hattori,H. Iwai","Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"野平博司,今 陽一郎,北村幸司,幸田みゆき,角嶋邦之,岩井洋","CeO2/La2O3/Si(100)構造の熱安定性","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 703",2008,Sept.
"船水清永,幸田みゆき,舘喜一,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 703",2008,Sept.
"幸田みゆき,舘喜一,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","CeO2/La2O3積層ゲート絶縁膜の電気特性評価","春季第55回応用物理学会学術講演会","春季第55回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 850",2008,Mar.