"Y. Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,K. Ohsawa","Regrown Source/Drain in InGaAs Multi-Gate MOSFETs",,"J. Crystal Growth",,"vol. 522",,"  （2019）11-15",2019,Sept.
"R. Aonuma,N. Kise,Y. Miyamoto","GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature",,"Jpn. J. Appl. Phys.",,,,"  58, SBBA08 (2019)",2019,Mar.
"Y. Miyamoto,N. Kise,R. Aonuma","GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters","2018 Workshop on Innovative Nanoscale Devices and Systems (WINDS)",,,,,"  P7",2018,Nov.
"青沼 遼介,木瀬 信和,宮本 恭幸","Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善","第79回応用物理学会秋季学術講演会",,,,,"  21p-331-7",2018,Sept.
"R. Aonuma,N. Kise,Y. Miyamoto","Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  PS-1-14",2018,Sept.
"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,,"  P2-32",2018,June
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,,"  We3C3.2",2018,May
"木瀬 信和,青沼 遼介,宮本 恭幸","GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響","第65回応用物理学会春季学術講演会",,,,,"  18p-C302-12",2018,Mar.
"金澤 徹,大澤 一斗,雨宮 智宏,木瀬 信和,青沼 遼介,宮本 恭幸","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,,"  18a-G203-3",,,2018,Mar.
"?澤 ??,?澤 徹,?瀬 信和,?宮 智宏,宮本 恭幸","InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発","第78回応用物理学会秋季学術講演会",,,,"No. 8a-S22-2",,2017,Sept.
"木瀬 信和,岩田 真次郎,青沼 遼介,宮本 恭幸","[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,,"  C804",,2017,May
"大澤 一斗,野口 真司,祢津 誠晃,木瀬 信和,宮本 恭幸","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"岩田 真次郎,木瀬 信和,青沼 遼介,宮本 恭幸","[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S","  04CG05 2017",2017,Mar.
"青沼遼介,岩田真次郎,木瀬信和,宮本恭幸","68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET","電気学会電子デバイス研究会",,,,,"  EDD-17-051",2017,Mar.
"大澤一斗,野口真司,祢津誠晃,木瀬信和,宮本恭幸","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.
"K. Ohsawa,N. Kise,Y. Miyamoto","Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks","2016 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2016,Sept.
"大澤 一斗,木瀬 信和,宮本 恭幸","15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性","第77回応用物理学会秋季学術講演会",,,,,,2016,Sept.
"Nobukazu Kise,Haruki Kinoshita,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain",,"Solid-State Electronics",,"Vol. 126",,"pp. 92-95",2016,Sept.
"Haruki Kinoshita,Nobukazu Kise,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","Compound Semiconductor Week (CSW2016)",,,,"  TuD4-2",,2016,June
"木下 治紀,木瀬 信和,祢津 誠晃,金澤 徹,宮本 恭幸","再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,"  22p-W541-5",,2016,Mar.
"木下 治紀,木瀬 信和,祢津 誠晃,金澤 徹,宮本 恭幸","[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.