"KAMALE TUOKEDAERHAN","A Study on Metal Gate Electrodes with Nano-Sized Grains for Scalable La-silicate Gate  Dielectrics",,,,,,,2014,Mar.
"KAMALE TUOKEDAERHAN","A Study on Metal Gate Electrodes with Nano-Sized Grains for Scalable La-silicate Gate Dielectrics",,,,,,,2014,Mar.
"KAMALE TUOKEDAERHAN","A Study on Metal Gate Electrodes with Nano-Sized Grains for Scalable La-silicate Gate  Dielectrics",,,,,,,2014,Mar.
""K. Tuokedaerhan","K. Kakushima","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","H. Iwai"","Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain",,"Applied Physics Letters (APL)",,"Vol. 104","No. 2",,2014,Jan.
"Shuhei Hosoda,Kamale Tuokedaerhan,Kuniyuki Kakushima,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kenji Natori,Hiroshi Iwai","Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode","224th ECS Meeting in San Francisco",,,,,,2013,Oct.
""K. Tuokedaerhan","R. Tan,K. Kakushima","P. Ahmet","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","T. Hattori","H. Iwai"","Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application",,"Applied Physics Letters (APL)",,"Vol. 103",,,2013,Sept.
"T. Kamale,R. Tan,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","PRiME 2012",,,,,,2012,Oct.
"Tohtarhan Kamal,R. Tan,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 281-284",2012,