"Ahmet Parhat,Wataru Hosoda,unknown unknown,Yoshihisa Ohishi,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,HIROSHI IWAI","Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs","IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology",,,,,,2010,May
"Wataru Hosoda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer","China Semiconductor Technology International Conference",,,,,"pp. 1105-1110",2010,Mar.
"Wataru Hosoda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","A Study of Schottky Barrier Height Modulation of NiSi by Interlayer Insertion and Its Application to SOI SB-MOSFETs","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"細田亘,野口浩平,パールハットアヘメト,角嶋邦之,筒井一生,杉井信之,服部健雄,岩井洋","異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用","第56回応用物理学関係連合講演会","第56回応用物理学会予稿集","応用物理学会",,"No. 2","pp. 868",2009,Mar.
"K. Noguchi,W. Hosoda,K. Matano,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. Chandorkar,T. Hattori,H. Iwai","Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs","214th ECS Meeting (PRiME 2008)",,,,,,2008,Oct.
"細田亘,野口浩平,角嶋邦之,パールハットアヘメト,筒井一生,杉井信之,服部健雄,岩井洋","Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 751",2008,Sept.