"Mokhammad Sholihul Hadi","A New Resistive Switching Based on Breakdown and Anodic Re-Oxidation of Thin SiO2 at the Interface of CeOx Buffer Layer and Silicon Related Bottom Electrodes",,,,,,,2016,Sept.
"Mokhammad Sholihul Hadi","A New Resistive Switching Based on Breakdown and Anodic Re-Oxidation of Thin SiO2 at the Interface of CeOx Buffer Layer and Silicon Related Bottom Electrodes",,,,,,,2016,Sept.
"Mokhammad Sholihul Hadi","A New Resistive Switching Based on Breakdown and Anodic Re-Oxidation of Thin SiO2 at the Interface of CeOx Buffer Layer and Silicon Related Bottom Electrodes",,,,,,,2016,Sept.
""M.S. Hadi","N. Sugii","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes",,"Microelectronics Reliability",,"Vol. 63",,"pp. 42-45",2016,Aug.
""Mokh Hadi","Shinichi Kano","Kuniyuki Kakushima","Yoshinori Kataoka","Akira Nishiyama","Nobuyuki Sugii","Hitoshi Wakabayashi","Kazuo Tsutsui","Kenji Natori","Hiroshi Iwai"","A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer",,"Semiconductor Science and Technology",,"Vol. 29","No. 11",,2014,Oct.
"unknown unknown,⅏t–G,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,•Π‰ͺD‘₯,ΌŽR²,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"unknown unknown,shinichi kano,⅏t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,⅏t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"shinichi kano,⅏t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Transient Switching Characteristics of Ce-oxide Resistive Switching Devices","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,⅏t–G,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,•Π‰ͺD‘₯,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"shinichi kano,⅏t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,•Π‰ͺD‘₯,Kenji Natori,Miranda Enrique,takeo hattori,HIROSHI IWAI","Influence electrode materials on CeOx based resistive switching","CSTIC 2012",,,,,,2013,
"unknown unknown,shinichi kano,⅏t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"shinichi kano,⅏t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,™ˆδM”V,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive switching properties of Ce oxides","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by Worldfs Leading Scientists",,,,,,2013,
"unknown unknown,shinichi kano,⅏t–G,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"S. Kano,C. Dou,M. Hadi,K. Kakushima,P. Ahmet,A. Nishiyama,N. Sugii,K. Tsutsui,Y. Kataoka,K. Natori,E. Miranda,T. Hattori,H. Iwai","Influence of Electrode Material for CaOx Based Resistive Switching","China Semiconductor Technology International Conference (CSTIC)",,,,,,2012,Mar.
"shinichi kano,⅏t–G,unknown unknown,Kuniyuki KAKUSHIMA,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive swirching properties of Ce oxides","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Š^ˆκ,MokhammadSholihul Hadi,⅏t–G,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","Šσ“y—ήŽ_‰»•¨(CeOX)‚π—p‚’‚½MIM\‘’‚Μ’οRƒXƒCƒbƒ`ƒ“ƒO“Α«","‘ζ72‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2011,