"ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Takashi Kanda,ŽR‰ΊWŽi,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PD03-1-4",2011,Oct.
"ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Kuniyuki KAKUSHIMA,Takashi Kanda,Y.C.Lin,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques",,"Microelectronic Engineering",,"Vol. 88","No. 7","pp. 1109-1112",2011,July
"Takashi Kanda,ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Y. C. Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,E.Y. Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors","CSTIC2011",,,,,,2011,
"ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Takashi Kanda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization","2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11)",,,,,,2011,
"Χˆδ—²Ži,_“c‚Žu,ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,Yueh Chin Lin,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,Edward Yi Chang,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","β‰–Œή—Ώ‚π—p‚’‚½In0.53Ga0.47As MOSƒLƒƒƒpƒVƒ^‚Μ“d‹C“Α«","‘ζ‚V‚P‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2010,Sept.
"_“c‚Žu,‘D…΄‰i,Yueh Chin Lin,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,Edward Yi Chang,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","HfO2/ La2O3/ In0.53 Ga0.47As\‘’‚ΜŠE–Κ“Α«‚Μ•Ο‰»","‘ζ57‰ρ‰ž—p•¨—ŠwŠΦŒW˜A‡u‰‰‰ο","‘ζ57‰ρ‰ž—p•¨—ŠwŠΦŒW˜A‡u‰‰‰οu‰‰—\eW",,,,"pp. 13-141",2010,Mar.
"ƒ_ƒŠƒ…[ƒVƒ…ƒUƒf,_“c‚Žu,Χˆδ—²Ži,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As","•‘‡‘n‘’—ΜˆζƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2010,
"Kiyohisa Funamizu,Takashi Kanda,Y.C.Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.