"雷 一鳴,Shu Munekiyo,Kuniyuki KAKUSHIMA,Takamasa Kawanago,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI,M. Furuhashi,N. Miura,S. Yamakawa","Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan",,,,,,2014,
"宗清修,岩井洋","La-silicate界面層を用いたSiC-MOSキャパシタの容量電圧特性の評価","第61回応用物理学会春季学術講演会",,,,,,2014,
"雷 一鳴,宗清修,角嶋邦之,川那子高暢,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋,古橋 壮之,三浦 成久,山川 聡","ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析","第61回応用物理学会春季学術講演会",,,,,,2014,
"宗清修,川那子高暢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響","第74回応用物理学会秋季学術講演会",,,,,,2013,