論文

• Taehwan Jun, Taketo Handa, Kihyung Sim, Soshi Iimura, Masato Sasase, Junghwan Kim, Yoshihiko Kanemitsu, Hideo Hosono. One-step solution synthesis of white-light emitting films via dimensionality control of the Cs–Cu–I system, APL Materials, AIP, Vol. 7, p. 111113, Nov. 2019.  公式リンク  
  
• Kihyung Sim, Taehwan Jun, Joonho Bang, Hayato Kamioka, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono. Performance boosting strategy for perovskite light-emitting diodes, Applied Physics Reviews, American Institute of Physics (AIP), Vol. 6, p. 031402, July 2019.  公式リンク  
  
• Taehwan Jun, Kihyung Sim, Soshi Iimura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono. Lead-Free Highly Efficient Blue-Emitting Cs3Cu2I5 with 0D Electronic Structure, Advanced Materials, Wiley, Vol. 30, No. 43, p. 1804547, Sept. 2018.  公式リンク  
  
• Taehwan Jun, Junghwan Kim, Masato Sasase, Hideo Hosono. Material Design of p-Type Transparent Amorphous Semiconductor, Cu–Sn–I, Advanced Materials, Wiley, Vol. 30, No. 12, 1706573, Mar. 2018.  公式リンク  
  

国際会議発表 (査読有り)

• Taehwan Jun, Kihyung Sim, Soshi Iimura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono. Pb-free Blue-emitting 0D Cs3Cu2I5 with High PLQY of ~90%, Society for Information Display (SID), SID international symposium digest of technical papers, pp. 1176-1178, May 2019.
• Taehwan Jun, Kota Aoyama, Joonho Bang, Junghwan Kim, Hideo Hosono. Solution-Processable P-type Transparent Amorphous Semiconductor for Flexible Electronics, AM-FPD 2018, AM-FPD 2018, IEEE, pp. 1-2, July 2018.
• Junghwan Kim, Taehwan Jun, Hideo Hosono. New P‐type Amorphous Semiconductor with High Transparency and High Mobility of 9 cm2/Vs for Next‐Generation Displays, Society for Information Display (SID), SID international symposium digest of technical papers, Wiley, Vol. 49, pp. 236-238, May 2018.  公式リンク  
  

国内会議発表 (査読有り)

• 青山 皓太, 全 泰桓, 金 正煥, 細野 秀雄. 新規p型無機半導体の開発およびフレキシブル素子への 応用, 第66回応用物理学会春季学術講演会, Mar. 2019.
• Taehwan Jun, Junghwan Kim, Hideo Hosono. Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm2/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital, The 65th Spring Meeting, Mar. 2018.

学位論文

• Materials Design and Development of Copper(I) Iodide-Based Compounds for Optoelectronics,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2019/09/20,   
• Materials Design and Development of Copper(I) Iodide-Based Compounds for Optoelectronics,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2019/09/20,   
• Materials Design and Development of Copper(I) Iodide-Based Compounds for Optoelectronics,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2019/09/20,   
• Materials Design and Development of Copper(I) Iodide-Based Compounds for Optoelectronics,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2019/09/20, 

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