@article{CTT100735623,
author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
title = {Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2},
journal = {IEEE Transactions on Nanotechnology},
year = 2017,
}
@article{CTT100741627,
author = {Vikrant UPADHYAYA and Toru KANAZAWA and Yasuyuki MIYAMOTO},
title = {Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation},
journal = {IEICE Transactions on Electronics},
year = 2017,
}
@article{CTT100709138,
author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
title = {Few Layer HfS2 FET},
journal = {Scientific Reports},
year = 2016,
}
@inproceedings{CTT100747601,
author = {Seiko Netsu and Toru Kanazawa and Vikrant Upadhyaya and Teerayut Uwanno and Tomohiro Amemiya and Kosuke Nagashio and Yasuyuki Miyamoto},
title = {Type II HfS2/MoS2 heterojunction Tunnel FET},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100735618,
author = {金澤 徹 and 雨宮 智宏 and 祢津 誠晃 and Vikrant Upadhyaya and 福田 浩一 and 宮本 恭幸},
title = {HfS2系トンネルトランジスタのデバイスシミュレーション},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100735914,
author = {祢津 誠晃 and 金澤 徹 and Vikrant Upadhyaya and ウワンノー ティーラユット and 雨宮 智宏 and 長汐 晃輔 and 宮本 恭幸},
title = {Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100722102,
author = {金澤 徹 and Vikrant Upadhyaya and 雨宮 智宏 and 石川 篤 and 鶴田 健二 and 田中 拓男 and 宮本 恭幸},
title = {HfO2パッシベーションによるHfS2 FETの特性改善},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100722083,
author = {Toru Kanazawa and Tomohiro Amemiya and Vikrant Upadhyaya and Atsushi Ishikawa and Kenji Tsuruta and Takuo Tanaka and Yasuyuki Miyamoto},
title = {Effect of the HfO2 passivation on HfS2 Transistors},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725110,
author = {Vikrant Upadhyaya and Toru Kanazawa and YASUYUKI MIYAMOTO},
title = {Vacuum annealing and passivation of Hf2 FET for mitigation of atmospheric degradation},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100725183,
author = {Vikrant Upadhyaya and Toru Kanazawa and Yasuyuki Miyamoto},
title = {Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation},
booktitle = {信学技報},
year = 2016,
}
@inproceedings{CTT100725116,
author = {Upadhyaya Vikrant and kanazawa Toru and Miyamoto Yasuyuki},
title = {Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100709147,
author = {Toru Kanazawa and Tomohiro Amemiya and Atsushi Ishikawa and Vikrant Upadhyaya and Takuo Tanaka and Kenji Tsuruta and Yasuyuki Miyamoto},
title = {HfS2 Electric Double Layer Transistor with High Drain Current},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693222,
author = {T. Kanazawa and T. Amemiya and A. Ishikawa and V. Upadhyaya and K. Tsuruta and T. Tanaka and Y. Miyamoto},
title = {Fabrication of Thin-Film HfS2 FET},
booktitle = {},
year = 2015,
}