国際会議発表 (査読有り)

• 岡田 泰典, 山口 晋平, 大橋 匠, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas, International Workshop on Junction Technology, June 2017.

学位論文

• Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20,   
• Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20,   
• Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20,   

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