@article{CTT100885001,
  author = {Junichi Nakashima and Takeshi Horiguchi and Yasushige Mukunoki and Makoto Hagiwara and Takahiro Urakabe and Shigeki Harada},
  title = {Automated Flexible Modeling for Various Full-SiC Power Modules},
  journal = {IEEE Transactions on Power Electronics},
  year = 2023,
}

@article{CTT100867084,
  author = {Junichi Nakashima and Takeshi Horiguchi and Yasushige Mukunoki and Kenji Hatori and Ryo Tsuda and Hitoshi Uemura and Makoto Hagiwara and Takahiro Urakabe},
  title = {Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching},
  journal = {IEEE Transactions on Industry Applications},
  year = 2022,
}

@article{CTT100794017,
  author = {Y. Mukunoki and K. Konno and T. Horiguchi and A. Nishizawa and M. Kuzumoto and M. Hagiwara and H. Akagi},
  title = {An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation},
  journal = {IEEE Transactions on Power Electronics},
  year = 2018,
}

@inproceedings{CTT100858222,
  author = {Junichi Nakashima and Takeshi Horiguchi and Yasushige Mukunoki and Kenji Hatori and Ryo Tsuda and Hitoshi Uemura and Makoto Hagiwara and Takahiro Urakabe},
  title = {Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100885636,
  author = {牛島和樹 and 葛本昌樹 and 萩原誠 and 滕飛 and 石井佑季 and 中嶋純一 and 堀口剛司 and 椋木康滋 and 地道拓志},
  title = {6.5 kV耐圧SiC-MOSFETのデバイスモデルを用いた並列駆動動作に関する一検討},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100885639,
  author = {滕飛 and 葛本昌樹 and 萩原誠 and 石井佑季 and 中嶋純一 and 堀口剛司 and 椋木康滋 and 地道拓志},
  title = {6.5kV耐圧SiC-MOSFETのデバイスモデル開発},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100885487,
  author = {Yasushige Mukunoki and Takeshi Horiguchi and Hiroshi Nakatake and Masaki Kuzumoto and Makoto Hagiwara and Hirofumi Akagi},
  title = {Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100885644,
  author = {滕飛 and 葛本昌樹 and 萩原誠 and 石井佑季 and 中嶋純一 and 椋木康滋 and 堀口剛司},
  title = {6.5kV耐圧SiC-MOSFETの出力特性モデリング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100885651,
  author = {椋木康滋 and 堀口剛司 and 葛本昌樹 and 萩原誠 and 赤木泰文},
  title = {SiC-MOSFETデバイスモデルの開発},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100885648,
  author = {松尾翼 and 昆野賢太郎 and 葛本昌樹 and 萩原誠 and 赤木泰文 and 椋木康滋 and 堀口剛司 and 中武浩},
  title = {SiC-MOSFETデバイスモデルによる高周波漏洩電流の解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100885657,
  author = {松尾翼 and 昆野賢太郎 and 葛本昌樹 and 萩原誠 and 赤木泰文 and 椋木康滋 and 堀口剛司 and 中山靖},
  title = {双方向絶縁形DC-DCコンバータにおけるSiC-MOSFETのソフトスイッチング特性解析},
  booktitle = {},
  year = 2017,
}

@misc{CTT100767074,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  year = 2018,
}

@misc{CTT100767075,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  year = 2018,
}

@misc{CTT100767076,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  year = 2018,
}

@misc{CTT100806241,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  year = 2018,
}



@phdthesis{CTT100767074,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100767075,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100767076,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  school = {東京工業大学},
  year = 2018,
}

@phdthesis{CTT100806241,
  author = {椋木康滋},
  title = {SiC-MOSFETデバイスモデルの開発と高精度回路解析への適用に関する研究},
  school = {東京工業大学},
  year = 2018,
}