@article{CTT100848807,
  author = {Ryo Wakabayashi and Kohei Yoshimatsu and Mai Hattori and Jung-Soo Lee and Osami Sakata and Akira Ohtomo},
  title = {Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1–x)2O3 (100) Films by Pulsed-laser Deposition},
  journal = {Cryst. Growth Des.},
  year = 2021,
}

@inproceedings{CTT100799545,
  author = {Jung-Soo Lee and Ryo Wakabayashi and Takumi Saito and Kohei Yoshimatsu and Motohisa Kado and Akira Ohtomo},
  title = {High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100799546,
  author = {Takumi Saito and Ryo Wakabayashi and Jung-Soo Lee and Kaisei Kamei and Kohei Yoshimatsu and Motohisa Kado and Akira Ohtomo},
  title = {Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100796052,
  author = {李 政洙 and 若林 諒 and 斉藤 拓海 and 吉松 公平 and 加渡Kado and 大友 明},
  title = {PLD法による窒素ドープ酸化ガリウム薄膜の成長と電気特性評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100796055,
  author = {斉藤 拓海 and 若林 諒 and 李 政洙 and 亀井 海聖 and 吉松 公平 and 加渡Kado and 大友 明},
  title = {半絶縁性中間層によるβ-Ga2O3ホモエピタキシャル層の界面伝導の抑制},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100761123,
  author = {李政洙 and 若林諒 and 吉松 公平 and 大友 明},
  title = {ウェットエチングを用いた<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>(100)基板表面のSi不純物除去},
  booktitle = {},
  year = 2018,
}

@misc{CTT100840046,
  author = {大友明 and 若林諒 and 李政洙 and 加渡　幹尚　},
  title = {酸化ガリウムの製造方法},
  howpublished = {登録特許},
  year = 2022,
  month  = {},
  note   = {特願2019-030421(2019/02/22), 特開2020-117430(2020/08/06), 特許第7176977号(2022/11/14)}
}