@article{CTT100659658,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Impact of Deformation Potential Increase at Si/SiO$_{2}$ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100654227,
  author = {N. Kadotani and T. Ohashi and T. Takahashi and S. Oda and K. Uchida},
  title = {Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100654228,
  author = {N. Kadotani and T. Takahashi and T. Ohashi and S. Oda and K. Uchida},
  title = {Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm},
  journal = {Journal of Applied Physics},
  year = 2011,
}

@inproceedings{CTT100664462,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田建},
  title = {不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652864,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100652958,
  author = {大橋輝之 and 小田俊理 and 内田建},
  title = {歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100655068,
  author = {T. Ohashi and T. Takahashi and T. Kodera and S. Oda and K. Uchida},
  title = {Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635542,
  author = {大橋輝之 and 高橋綱己 and 内田 建 and 小田俊理},
  title = {MOS 界面における変形ポテンシャルの上昇},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100635543,
  author = {黒澤裕也 and 角谷直哉 and 高橋綱己 and 大橋輝之 and 小田俊理 and 内田 建},
  title = {ナノ薄膜SOI における不純物のイオン化エネルギー増大},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100652972,
  author = {Teruyuki Ohashi and Shunri Oda and Ken Uchida},
  title = {Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100653857,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100632992,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100634451,
  author = {Teruyuki Ohashi and Naotoshi Kadotani and Tsunaki Takahashi and Shunri Oda and Ken Uchida},
  title = {Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100630242,
  author = {大橋輝之 and 高橋綱己 and 小寺哲夫 and 小田俊理 and 内田 建},
  title = {低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100654159,
  author = {T. Ohashi and T. Takahashi and N. Beppu and S. Oda and K. Uchida},
  title = {Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs},
  booktitle = {},
  year = 2011,
}