@article{CTT100873419,
  author = {Hayato Yoshida and Yusaku Shiotsu and Daiki Kitagata and Shuichiro Yamamoto and Satoshi Sugahara},
  title = {Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches},
  journal = {IEEE Open Journal of Circuits and Systems},
  year = 2021,
}

@article{CTT100840211,
  author = {Daiki Kitagata and Shuichiro Yamamoto and SATOSHI SUGAHARA},
  title = {Proactive useless data flush architecture for nonvolatile SRAM using magnetic tunnel junctions},
  journal = {},
  year = 2020,
}

@article{CTT100814140,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions},
  journal = {Jpn. J. Appl. Phys},
  year = 2019,
}

@inproceedings{CTT100846277,
  author = {北形大樹 and 吉田隼 and 塩津勇作 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションSRAMセルの設計と解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100846276,
  author = {瀧口憲一郎 and 北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションFFの提案},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100846275,
  author = {塩津勇作 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {新型超低電圧リテンションSRAMマクロの設計と解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100846274,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {各種リテンションSRAMのパワーゲーティングにおける電力削減効率に関する電源遮断可能時間分布の影響},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100840216,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {新型擬似不揮発性SRAMセルの提案},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100840218,
  author = {原拓実 and 吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {ニアスレッショルド電圧動作擬似不揮発SRAMセルの設計と解析},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100814136,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {A New Store Energy and Latency Reduction Architecture for Nonvolatile SRAM Using STT-MTJs: Proactive Useless Data Flush Architecture},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100840214,
  author = {瀧口憲一郎 and 北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {不揮発/擬似不揮発性FFを用いたパワーゲーティングの性能評価},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814146,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {NV-SRAMを用いたUseless dataの積極的破棄による不揮発性パワーゲーティング},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814144,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {不揮発/擬似不揮発記憶を用いたSRAMのパワーゲーティング性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814142,
  author = {原拓実 and 吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {各種リテンション技術を用いたSRAMのパワーゲーティング性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814147,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {デュアルパワースイッチを用いた擬似不揮発性SRAMの設計と解析},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814150,
  author = {北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {擬似不揮発性FFの速度性能優先設計とその回路性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814243,
  author = {北形大樹 and 松﨑翼 and 山本修一郎 and 菅原聡},
  title = {擬似不揮発性FFの速度性能優先設計とその回路性能},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100784484,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Design and Performance of Virtually Nonvolatile Retention Flip-Flop Using Dual-Mode Inverters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784485,
  author = {Kitagata and H. Yoshida and S. Yamamoto and S. Sugahara},
  title = {Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784489,
  author = {吉田隼 and 北形大樹 and 山本修一郎 and 菅原聡},
  title = {デュアルモードインバータを用いた疑似不揮発性SRAMの設計と解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784486,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {A New Architecture of Store Energy and Latency Reduction for Nonvolatile SRAM Based on Spintronics/CMOS-Hybrid Technology},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784490,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {デュアルモードインバータを用いた疑似不揮発性FFの設計と解析},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784487,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Virtually Nonovolatile Retention Flip-Flop Using FinFET Technology},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784493,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {階層型ストアフリー電源遮断を用いた不揮発性SRAMのエネルギー性能},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100784470,
  author = {D. Kitagata and S. Yamamoto and S. Sugahara},
  title = {Hierarchical Store-Free Architecture for Nonvolatile SRAM Using STT-MTJs},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742637,
  author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAMのアーキテクチャとエネルギー性能},
  booktitle = {電子情報通信学会技術研究報告},
  year = 2017,
}

@inproceedings{CTT100784481,
  author = {北形大樹 and 山本修一郎 and 菅原聡},
  title = {強磁性トンネル接合を用いた不揮発性SRAMの待機時電力削減能力},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742359,
  author = {北形大樹 and 周藤悠介 and 山本修一郎 and 菅原聡},
  title = {不揮発性SRAMの設計とエネルギー性能の解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742352,
  author = {T. Akushichi and D. Kitagata and Y. Shuto and S. Sugahara},
  title = {Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742353,
  author = {D. Kitagata and Y. Shuto and S. Yamamoto and S. Sugahara},
  title = {Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100742358,
  author = {北形大樹 and 悪七泰樹 and 菅原聡},
  title = {電界アシスト4端子非局所MOSデバイスの解析と設計},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742348,
  author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100742349,
  author = {T. Akushichi and D. Kitagata and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100695037,
  author = {D. Kitagata and T. Akushichi and Y. Takamura and Y. Shuto and S. Sugahara},
  title = {Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices},
  booktitle = {},
  year = 2015,
}

@misc{CTT100864658,
  author = {北形大樹},
  title = {不揮発/擬似不揮発記憶を用いたCMOSロジックの低消費電力技術に関する研究},
  year = 2020,
}

@misc{CTT100864657,
  author = {北形大樹},
  title = {不揮発/擬似不揮発記憶を用いたCMOSロジックの低消費電力技術に関する研究},
  year = 2020,
}

@misc{CTT100864656,
  author = {北形大樹},
  title = {不揮発/擬似不揮発記憶を用いたCMOSロジックの低消費電力技術に関する研究},
  year = 2020,
}



@phdthesis{CTT100864658,
  author = {北形大樹},
  title = {不揮発/擬似不揮発記憶を用いたCMOSロジックの低消費電力技術に関する研究},
  school = {東京工業大学},
  year = 2020,
}

@phdthesis{CTT100864657,
  author = {北形大樹},
  title = {不揮発/擬似不揮発記憶を用いたCMOSロジックの低消費電力技術に関する研究},
  school = {東京工業大学},
  year = 2020,
}

@phdthesis{CTT100864656,
  author = {北形大樹},
  title = {不揮発/擬似不揮発記憶を用いたCMOSロジックの低消費電力技術に関する研究},
  school = {東京工業大学},
  year = 2020,
}