@article{CTT100760684,
  author = {Shoichi Yoshitomi and Shotaro Tadano and Kentaro Yamanaka and Nobuhiko Nishiyama and Shigehisa Arai},
  title = {Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate},
  journal = {Japanese Journal of Applied Physics},
  year = 2017,
}

@article{CTT100722903,
  author = {Takaaki Kaneko and Takumi Yoshida and Shotaro Tadano and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@inproceedings{CTT100758286,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3 µm帯トランジスタレーザにおける電流増幅率と 温度安定性の向上},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100747593,
  author = {Kentarou Yamanaka and Shotaro Tadano and Shoichi Yoshitomi and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Base Layer Design for Voltage Modulation in 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100744007,
  author = {Shoichi Yoshitomi and Shotaro Tadano and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Thermal Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Au Plating},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738246,
  author = {Shoichi Yoshitomi and Shotaro Tadano and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Lasing Characteristics of  1.3-µm npn-AlGaInAs/InP Transistor Laser with Reduced Base Bandgap Structure},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738165,
  author = {Kentarou Yamanaka and Shotaro Tadano and Shoichi Yoshitomi and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Effect of GaInAsP Absorption Layer Composition on Voltage Modulation in 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738164,
  author = {山中健太郎 and 只野翔太郎 and 吉冨翔一 and 西山伸彦 and 荒井滋久},
  title = {1.3μm帯npn-AlGaInAs/InPトランジスタレーザの電圧変調動作に向けたGaInAsP吸収層組成の検討},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747605,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {p-GaInAsPベース層バンドギャップ低減による1.3-μm帯npn-AlGaInAs/InPトランジスタレーザの電流増幅率の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100747610,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3-μm帯npn-AlGaInAs/InPトランジスタレーザにおける高速電圧変調動作に向けた電気的応答特性の解析},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100741338,
  author = {吉冨翔一 and 只野翔太郎 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3-μm帯npn-AlGaInAs/InPトランジスタレーザにおける熱特性の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100722896,
  author = {Shotaro Tadano and Takaaki Kaneko and Kentarou Yamanaka and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Analysis of Voltage Dependence on Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Lasers},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703865,
  author = {山中健太郎 and 金子貴晃 and 只野翔太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3 μm 帯 npn-AlGaInAs/InP トラン ジスタレーザにおける 発振波長のコレクタ－ベース電圧依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703864,
  author = {只野翔太郎 and 金子貴晃 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3μm帯npn-AlGaInAs/InPトランジスタレーザにおける 光出力特性と電気特性の評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100703860,
  author = {只野翔太郎 and 金子貴晃 and 山中健太郎 and 西山伸彦 and 荒井滋久},
  title = {埋め込みヘテロ構造を用いた1.3-µm帯npn-AlGaInAs/InP トランジスタレーザの特性評価},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100696263,
  author = {金子貴晃 and 吉田匠 and 只野翔太郎 and 西山伸彦 and 荒井滋久},
  title = {1.3μm帯npn-AlGaInAs/InPトランジスタレーザにおけるコレクタ-ベース間電圧変調動作特性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696732,
  author = {只野翔太郎 and 吉田匠 and 金子貴晃 and 西山伸彦 and 荒井滋久},
  title = {薄膜化したp-GaInAsPベース層を有する 1.3-μm帯npn-AlGaInAs/InP トランジスタレーザの発振特性},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696262,
  author = {Takaaki Kaneko and Takumi Yoshida and Shotaro Tadano and Nobuhiko Nishiyama and SHIGEHISA ARAI},
  title = {Dynamic Behavior of 1.3-μm npn-AlGaInAs/InP Transistor Lasers under Collector-Base Voltage Loss-modulation},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100696261,
  author = {Takaaki Kaneko and Takumi Yoshida and Shotaro Tadano and Nobuhiko Nishiyama and Shigehisa Arai},
  title = {Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Thin Current Injection Base Layer},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100687405,
  author = {只野翔太郎 and 吉田匠 and 金子貴晃 and 西山伸彦 and 荒井滋久},
  title = {1.3 μm 帯 npn-AlGaInAs/InP トランジスタレーザにおける ベース層薄膜化によるキャリア引き抜き量の向上},
  booktitle = {},
  year = 2015,
}