@article{CTT100813954, author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima}, title = {Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors}, journal = {Microelectronics Reliability}, year = 2018, } @article{CTT100813955, author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakaw and Kuniyuki Kakushima}, title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing}, journal = {Microelectronics Reliability}, year = 2018, } @inproceedings{CTT100830074, author = {Y. M. Lei and T. Kaneko and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and M. Furuhashi and S. Tomohisa and S. Yamakawa}, title = {Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors}, booktitle = {}, year = 2016, } @misc{CTT100807279, author = {Lei Yiming}, title = {A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics}, year = 2018, } @misc{CTT100767996, author = {Lei Yiming}, title = {A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics}, year = 2018, } @misc{CTT100768132, author = {Lei Yiming}, title = {A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics}, year = 2018, } @misc{CTT100710318, author = {角嶋邦之 and 川那子高暢 and 宗清修 and LEIYIMING and 古橋 壮之 and 三浦 成久}, title = {半導体装置及びその製造方法}, howpublished = {登録特許}, year = 2018, month = {}, note = {特願2014-173714(2014/08/28), 特開2016-048758(2016/04/07), 特許第6270667号(2018/01/12)} } @phdthesis{CTT100807279, author = {Lei Yiming}, title = {A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics}, school = {東京工業大学}, year = 2018, } @phdthesis{CTT100767996, author = {Lei Yiming}, title = {A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics}, school = {東京工業大学}, year = 2018, } @phdthesis{CTT100768132, author = {Lei Yiming}, title = {A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics}, school = {東京工業大学}, year = 2018, }