@article{CTT100822681,
  author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
  title = {Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs},
  journal = {Jpn. J. Appl. Phys.},
  year = 2020,
}

@inproceedings{CTT100822691,
  author = {K. Fukuda and N. Nogami and S. Kunisada and Y. Miyamoto},
  title = {Circuit speedoriented device design scheme for double gate hetero tunnel FETs},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100800849,
  author = {野上 直哉 and 福田 浩一 and 宮本 恭幸},
  title = {量子効果の影響を考慮したGaAsSb/InGaAs Double-Gate Tunnel FETの検討},
  booktitle = {},
  year = 2019,
}