@article{CTT100909038,
  author = {Zhang Ruixian and Ho Hoang Huy and Takanori Shirokura and Pham Nam Hai and Quang Le and Brian York and Cherngye Hwang and Xiaoyong Liu and Michael Gribelyuk and Xiaoyu Xu and Son Le and Maki Maeda and Tuo Fan and Yu Tao and Hisashi Takano},
  title = {High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  journal = {Applied Physics Letters},
  year = 2024,
}

@article{CTT100905206,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory},
  journal = {IEEE Transactions on Magnetics},
  year = 2023,
}

@inproceedings{CTT100916626,
  author = {Z. Ruixian and H. H. Huy and Q. Le and B. York and C. Hwang and X. Liu and M. Gribelyuk and X. Xu and S. Le and M. Maeda and F. Tuo and Y. Tao and H. Takano and T. Shirokura and P. N. Hai},
  title = {High spin Hall angle in heterostructures of BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100908547,
  author = {Ruixian Zhang and Ho Hoang Huy and Takanori Shirokura and Pham Nam Hai and Quang Le and Brian R. York and Cherngye Hwang and Xiaoyong Liu and Xiaoyu Xu and Son Le and Michael Gribelyuk and Hisashi Takano and Maki Maeda and Fan Tuo and Yu Tao},
  title = {High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers},
  booktitle = {},
  year = 2024,
}

@inproceedings{CTT100905211,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100900901,
  author = {Ho Hoang Huy and R. Zhang and T. Shirokura and S. Takahashi and Y. Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100886126,
  author = {Zhang Ruixian and Takanori Shirokura and Tuo Fan and Pham Nam Hai},
  title = {Fabrication and evaluation of fully sputtered topological insulator/perpendicularly magnetized CoFeB/MgO multilayers for SOT-MRAM application},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100888691,
  author = {Ho Hoang Huy and Zhang Ruixian and Takanori Shirokura and Shigeki Takahashi and Yoshiyuki Hirayama and Pham Nam Hai},
  title = {Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory},
  booktitle = {},
  year = 2023,
}

@inproceedings{CTT100879796,
  author = {Ruixian Zhang and Shirokura Takanori and Tuo Fan and Pham Nam Hai},
  title = {Fabrication and evaluation of BiSb topological insulator / perpendicular magnetization CoFeB multilayer film for SOT-MRAM application},
  booktitle = {},
  year = 2022,
}