@article{CTT100646368,
  author = {Kiichi Tachi and N. Vulliet and S. Barraud and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Cristoloveanu and T. Ernst},
  title = {Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET”},
  journal = {Solid-State Electronics},
  year = 2011,
}

@article{CTT100621288,
  author = {Kiichi Tachi and S. Barraud and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Cristoloveanu and T. Ernst},
  title = {Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs},
  journal = {Microelectronics Reliability},
  year = 2011,
}

@article{CTT100614619,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of rare earth silicates for highly scaled gate dielectrics},
  journal = {Microelectronic Engineering},
  year = 2010,
}

@article{CTT100607472,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and M.Adachi and Koichi Okamoto and Soshi Sato and Jaeyeol Song and Takamasa Kawanago and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of La-silicate for direct contact of high-k with silicon},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@article{CTT100607466,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and Kiichi Tachi and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric},
  journal = {Solid-State Electronics},
  year = 2010,
}

@article{CTT100588545,
  author = {Tomotsune Koyanagi and Kiichi Tachi and Koichi Okamoto and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100600446,
  author = {Kuniyuki KAKUSHIMA and Kiichi Tachi and Jaeyeol Song and Soshi Sato and Hiroshi Nohira and E. Ikenaga and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film},
  journal = {JOURNAL OF APPLIED PHYSICS},
  year = 2009,
}

@article{CTT100588982,
  author = {Kuniyuki KAKUSHIMA and K. Okamoto and M. Adachi and Kiichi Tachi and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion},
  journal = {SOLID-STATE ELECTRONICS},
  year = 2008,
}

@article{CTT100586854,
  author = {Soshi Sato and Kiichi Tachi and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Thermal-stability improvement of LaON thin film formed using nitrogen radicals},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@article{CTT100586853,
  author = {Takamasa Kawanago and Kiichi Tachi and Jaeyeol Song and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application},
  journal = {Microelectronic Engineering},
  year = 2007,
}

@inproceedings{CTT100649144,
  author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100622608,
  author = {Kiichi Tachi and Kuniyuki KAKUSHIMA and HIROSHI IWAI and S. Cristoloveanu and T. Ernst},
  title = {Characterization of carrier transport in vertically-stacked Si nanowire FETs},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616633,
  author = {Kiichi Tachi and M. Casse and S. Barraud and C. Dupre and A. Hubert and N. Vulliet and M.E. Faivre and C. Vizioz and C. Carabasse and V. Delaye and J.M. Hartmann and HIROSHI IWAI and S. Cristoloveanu and O. Faynot and T. Ernst},
  title = {Experimental study on carrier transport limiting phenomena in 10 nm width nanowire CMOS transistors},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613551,
  author = {Kiichi Tachi and N. Vulliet and S. Barraud and B. Guillaumot and V. Maffini-Alvaro and C. Vizioz and C. Arvet and Y. Campidelli and P. Gautier and J.M. Hartmann and T. Skotnicki and S. Cristoloveanu and HIROSHI IWAI},
  title = {3D Source/Drain Doping Optimization in Multi-Channel MOSFET},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630954,
  author = {舘喜一 and 角嶋邦之 and T. Ernst and S. Cristoloveanu and 岩井洋},
  title = {Vertically-Stacked Nanowire Transistors for future CMOS},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100598316,
  author = {Kiichi Tachi and M.Casse and D.Jang and C.Dupre and A.Hubert and N.Vulliet and C. Maffini-Alvaro and C. Vizioz and C. Carabasse and V. Delaye and J.M.Hartmann and G.Ghibaudo and HIROSHI IWAI and S. Cristoloveanu and O. Faynot and T.Ernst},
  title = {Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597756,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585392,
  author = {Kiichi Tachi and T Ernst and C Dupre and A Hubert and S Becu and HIROSHI IWAI and S Cristoloveanu and O Faynot},
  title = {Transport Optimization with Width Dependence of 3D-stacked GAA Silicon Nanowire FET with High-k/Metal Gate Stack},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585306,
  author = {宋在烈 and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100830627,
  author = {M. Kouda and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830626,
  author = {K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100585094,
  author = {船水清永 and 幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100830637,
  author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830655,
  author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100576379,
  author = {宋在烈 and 舘喜一 and 岡本晃一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576428,
  author = {北村 幸司 and 舘喜一 and 角嶋邦之 and 野平 博司 and 岩井洋},
  title = {HfLaOx/SiO2/Siの組成分布に及ぼす熱処理の効果},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576382,
  author = {幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2/La2O3積層ゲート絶縁膜の電気特性評価},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576381,
  author = {岡本晃一 and 舘喜一 and 足立学 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 杉井信之 and 筒井一生 and 服部健雄 and 岩井洋},
  title = {Hf O2系 High-kゲートMOSFETの電気特性に対するLa2O3界面層挿入効果},
  booktitle = {春季第55回応用物理学会学術講演会 予稿集},
  year = 2008,
}

@inproceedings{CTT100576380,
  author = {足立学 and 岡本晃一 and 舘喜一 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3積層キャパシタにおけるLa2O3層に依存した界面層成長抑制の効果},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100567354,
  author = {舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {Sub-1.0nm EOTにおけるW／La2O3ゲートスタックｎMOSFETの電子移動度解析},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100830660,
  author = {Kuniyuki Kakushima and Kouichi Okamoto and Manabu Adachi and Kiichi Tachi and Jaeyeol Song and Soushi Sato and Takamasa Kawanago and Parhat Ahmet and Kazuo Tsutsui and Nobuyuki Sugii and Takeo Hattori and Hiroshi Iwai},
  title = {Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100544402,
  author = {K.Tachi and K.Kakushima and P.Ahmet and K.Tsutsui and N.Sugii and T.Hattori and H.Iwai},
  title = {Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer},
  booktitle = {ECS Transactions},
  year = 2007,
}

@inproceedings{CTT100544409,
  author = {藤澤 宏樹 and 舘 喜一 and 角嶋 邦之 and パールハット・アヘメト and 筒井 一生 and 杉井 信之 and 服部 健雄 and 岩井 洋},
  title = {Alキャップ層がW/La2O3/Si MOS構造の電気特性に及ぼす影響},
  booktitle = {秋季第68回応用物理学会学術講演会予稿集},
  year = 2007,
}

@inproceedings{CTT100599990,
  author = {佐藤創志 and 舘喜一 and 宋在烈 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {ラジカル窒化によるLa<sub>2O</sub>3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）},
  booktitle = {電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス},
  year = 2007,
}

@inproceedings{CTT100830711,
  author = {K. Tachi and H. Iwai and T. Hattori and N. Sugii and K. Tsutsui and P. Ahemt and K. Kakushima},
  title = {Effect of Oxygen for Ultra-Thin La2O3 Film Deposition},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830712,
  author = {J. Molina and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and I. Hiroshi},
  title = {Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830716,
  author = {H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and J. Ng and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori},
  title = {Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2006,
}