@inproceedings{CTT100649144,
  author = {小山将央 and Naoto Shigemori and Kenji Ozawa and Kiichi Tachi and Kuniyuki KAKUSHIMA and O. Nakatsuka and 大毛利健治 and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Keisaku Yamada and HIROSHI IWAI},
  title = {Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100622683,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {An effective suppression process for Ni silicide enchroachment into Si nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622684,
  author = {小山将央 and Naoto Shigemori and Hideaki Arai and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Lateral encroachment of Ni silicide into silicon nanowire},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100613735,
  author = {Y. Wu and Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and 西山彰 and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613732,
  author = {Naoto Shigemori and Soshi Sato and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616055,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {トンネルFET動作に向けたNiシリサイド/Si接触におけるトンネル電流の観測},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616068,
  author = {小山 将央 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {窒素導入によるSiナノワイヤ内へのNiシリサイド侵入抑制機構の検討},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100608701,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討},
  booktitle = {電子情報通信学会技術研究報告 pp.17-22},
  year = 2010,
}

@inproceedings{CTT100603768,
  author = {茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {酸化膜中のSiナノワイヤへのNi拡散の制御},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100630958,
  author = {茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 西山彰 and 筒井一生 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires using Nitrogen Incorporation},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630960,
  author = {小山将央 and 茂森直登 and 新井英朗 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Lateral encroachment of Ni silicide into Si nanowire},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631006,
  author = {呉研 and 茂森直登 and 佐藤創志 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Observation of Tunneling FET operation in MOSFET with NiSi/Si Schottky source/channel interface},
  booktitle = {},
  year = 2010,
}