国際会議発表 (査読有り)

• Iriya Muneta, Naoki Hayakawa, Takanori Shirokura, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Ferromagnetic tunnel devices with two-dimensional layered material MoS2, Collaborative Conference on Materials Research (CCMR) 2019, June 2019.
• I. Muneta, Danial B. Z., N. Hayakawa, K. Kakushima, K. Tsutsui, H. Wakabayashi. Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate, International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS), Aug. 2018.
• N. Hayakawa, I. Muneta, T. Ohashi, K. Matsuura, J. Shimizu, K. Kakushima, K. Tsutsui, H. Wakabayashi. Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure, International Conference on Solid State Devices and Materials, Sept. 2017.

国内会議発表 (査読なし・不明)

• Zulkornain Bin Danial, 宗田 伊理也, 早川 直希, 角嶋 邦之, 筒井 一生, 若林 整. Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate, 第65回応用物理学会春季学術講演会, Mar. 2018.
• 早川直希, 宗田伊理也, 大橋匠, 松浦賢太朗, 清水淳一, 角嶋邦之, 筒井一生, 若林整. トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性, 第64回応用物理学会春季学術講演会, Mar. 2017.

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