@article{CTT100679475,
  author = {H. Sugiyama and A. Teranishi and S. Suzuki and M. Asada},
  title = {Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates},
  journal = {Jpn. J. Appl. Phys.},
  year = 2014,
}

@article{CTT100635079,
  author = {A. Teranishi and K. Shizuno and S. Suzuki and M. Asada and H. Sugiyama and H. Yokoyama},
  title = {Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay},
  journal = {IEICE Electron. Express},
  year = 2012,
}

@article{CTT100635080,
  author = {A. Teranishi and S. Suzuki and K. Shizuno and M. Asada and H. Sugiyama and H. Yokoyama},
  title = {Estimation of Transit time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers},
  journal = {Trans. Electron. IEICE of Japan},
  year = 2012,
}

@article{CTT100635081,
  author = {H. Sugiyama and A. Teranishi and S. Suzuki and M. Asada},
  title = {High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10<sup>5</sup> A/cm<sup>2</sup> Grown by Metal-Organic Vapor-Phase Epitaxy},
  journal = {J. Crystal Growth},
  year = 2011,
}

@article{CTT100619716,
  author = {S. Suzuki and M. Asada and A. Teranishi and H. Sugiyama and H. Yokoyama},
  title = {Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature},
  journal = {Appl. Phys. Lett.},
  year = 2010,
}

@article{CTT100613500,
  author = {S. Suzuki and K. Sawada and A. Teranishi and M. Asada and H. Sugiyama and H. Yokoyama},
  title = {Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doping structures},
  journal = {Electron. Lett.},
  year = 2010,
}

@article{CTT100612593,
  author = {H. Sugiyama and H. Yokoyama and A. Teranishi and S. Suzuki and M. Asada},
  title = {Extremely High Peak Current Densities of over 1×10<sup>6</sup> A/cm<sup>2</sup> in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2010,
}

@article{CTT100612574,
  author = {M. Shiraishi and S. Suzuki and A. Teranishi and M. Asada and H. Sugiyama and H. Yokoyama},
  title = {Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas},
  journal = {Jpn. J. Appl. Phys.},
  year = 2010,
}

@article{CTT100603629,
  author = {Safumi Suzuki and Atsushi Teranishi and Kensuke Hinata and Masahiro Asada and Hiroki Sugiyama and Haruki Yokoyama},
  title = {Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode},
  journal = {Applied Physics Express},
  year = 2009,
}

@article{CTT100612580,
  author = {N. Kishimoto and S. Suzuki and A. Teranishi and M. Asada},
  title = {Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers},
  journal = {Applied Phys. Express},
  year = 2008,
}