@article{CTT100693011,
  author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@article{CTT100659580,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa},
  journal = {JPN. J. APPL. PHYS.},
  year = 2013,
}

@inproceedings{CTT100693231,
  author = {大橋一水 and 藤松基彦 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける SSとON電流のボディ幅依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100679170,
  author = {K. Ohashi and M. Fujimatsu and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100693228,
  author = {大橋一水 and 藤松基彦 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いたDouble-Gate Tunnel FETの理論特性とその実験的検証},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100693229,
  author = {宮本恭幸 and 金澤 徹 and 米内義晴 and 加藤 淳 and 藤松基彦 and 柏野壮志 and 大澤一斗 and 大橋一水},
  title = {低電圧/高速動作にむけたInGaAs MOSFETソース構造},
  booktitle = {IEICE Technical Report},
  year = 2014,
}

@inproceedings{CTT100679167,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and A. Kato and M. Fujimatsu and M. Kashiwano and K. Ohsawa and K. Ohashi},
  title = {(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100659771,
  author = {宮本 恭幸 and 藤松 基彦},
  title = {GaAsSb/InGaAs 縦型トンネル FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659766,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659714,
  author = {M. Kashiwano and J. Hirai and S. Ikeda and M. Fujimatsu and Y. Miyamoto},
  title = {High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659768,
  author = {藤松基彦 and 宮本恭幸},
  title = {GaAsSb/InGaAs ヘテロ接合を用いた縦型トンネル FET における サブスレッショルドスロープの改善},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100659705,
  author = {M. Fujimatsu and H. Saito and Y. Miyamoto},
  title = {71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642429,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642428,
  author = {柏野壮志 and 平井準 and 池田俊介 and 藤松基彦 and 宮本恭幸},
  title = {GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100642422,
  author = {藤松基彦 and 齋藤尚史 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100619802,
  author = {藤松基彦 and 齋藤尚史 and 楠崎智樹 and 松本 豊 and 平井 準 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100642378,
  author = {Motohiko Fujimatsu and Hisashi Saito and YASUYUKI MIYAMOTO},
  title = {GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure},
  booktitle = {},
  year = 2011,
}