@article{CTT100611235,
  author = {Shuhei Yoshita and Ryosuke Tamura and Dai Taguchi and Martin Weis and Eun Ju Lim and Takaaki Manaka and MITSUMASA IWAMOTO},
  title = {Displacement Current analysis of carrier behavior in pentacene field effect transistor with poly(vinylidene fluoride and tetrafluoroethylene) gate insulator},
  journal = {Journal of Applied Physics},
  year = 2009,
}

@article{CTT100611254,
  author = {Ryosuke Tamura and Shuhei Yoshita and Eun Ju Lim and Takaaki Manaka and MITSUMASA IWAMOTO},
  title = {Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF-TeFE) Gate Insulator as an Element of Maxwell-Wagner Effect System},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100571370,
  author = {Ryosuke Tamura and Shuhei Yoshita and Eun Ju Lim and Takaaki Manaka and MITSUMASA IWAMOTO},
  title = {Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF-TeFE) Gate Insulator as an element of Maxwell-Wagner Effect System},
  journal = {Japanese Journal of Applied Physics},
  year = 2009,
}

@article{CTT100562185,
  author = {Ryosuke Tamura and Eunju Lim and Shuhei Yoshita and Takaaki Manaka and Mitsumasa Iwamoto},
  title = {Analysis of threshold voltage shift of pentacene field effect transistor with ferroelectric gate insulator as a Maxwell–Wagner effect},
  journal = {Thin Solid Films},
  year = 2008,
}

@article{CTT100551269,
  author = {田村亮祐 and 吉田周平 and LimEun and 間中 孝彰 and 岩本光正},
  title = {Pentacene field effect transistor with ferroelectric gate insulator as a Maxwell-Wagner effect element},
  journal = {Japanese Journal of Applied Physics},
  year = 2008,
}

@inproceedings{CTT100571259,
  author = {吉田 周平 and 田村 亮祐 and 田口 大 and 林 銀珠 and 間中 孝彰 and 岩本 光正},
  title = {変位電流法によるP(VDF-TeFE)ゲート絶縁膜を持つペンタセンFETの解析},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100571258,
  author = {Shuhei Yoshita and Ryosuke Tamura and Martin Weis and Eunju Lim and Takaaki Manaka and Mitsumasa Iwamoto},
  title = {Analysis of carrier behavior in pentacene FET withP(VDF-TeFE) gate insulator using displacement current measurement},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100571371,
  author = {Ryosuke Tamura and Shuhei Yoshita and Eun Ju Lim and Takaaki Manaka and MITSUMASA IWAMOTO},
  title = {Carrier injection and accumulation of pentacene field effect transistor with P(VDF-TeFE) gate insulator},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100571369,
  author = {田村亮祐 and 吉田周平 and LimEun and 間中孝彰 and 岩本光正},
  title = {顕微時間分解SHG測定による強誘電性ゲート絶縁膜を用いたペンタセンFETの評価},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100571367,
  author = {Ryosuke Tamura and Shuhei Yoshita and Eun Ju Lim and Takaaki Manaka and MITSUMASA IWAMOTO},
  title = {Analysis of Pentacene Field-Effect Transistor with a Ferroelectric P(VDF-TeFE) Gate Insulator as an element of Maxwell-Wagner Effect System},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100571257,
  author = {吉田 周平 and 田村 亮祐 and 林 銀珠 and 間中 孝彰 and 岩本光正},
  title = {強誘電体をゲート絶縁膜にもつペンタセンFETを用いたソース・ドレイン電極の影響の評価},
  booktitle = {信学技報},
  year = 2008,
}

@inproceedings{CTT100571365,
  author = {Ryosuke Tamura and Shuhei Yoshita and Eun Ju Lim and Takaaki Manaka and MITSUMASA IWAMOTO},
  title = {Analysis of charge accumulation in pentacene field effect transistor with ferroelectric gate insulator on the basis of Maxwell-Wagner model},
  booktitle = {Japnanese Journal of Applied Physics},
  year = 2008,
}

@inproceedings{CTT100571368,
  author = {田村亮祐 and 吉田周平 and LimEun and 間中孝彰 and 岩本光正},
  title = {ポリイミド絶縁膜を用いたペンタセンFETの閾値シフトの効果},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100562170,
  author = {田村亮祐 and 吉田周平 and LimEun and 間中孝彰 and 岩本光正},
  title = {Maxwell Wagnerモデルに基づいた強誘電性ゲート絶縁膜を持つペンタセンFETの解析II},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100534757,
  author = {田村亮祐 and 吉田周平 and 林銀珠 and 間中孝彰 and 岩本光正},
  title = {Maxwell Wagnerモデルに基づいた強誘電性ゲート絶縁膜を持つペンタセンFETの解析},
  booktitle = {},
  year = 2007,
}