@article{CTT100786666,
  author = {Yusuke Takei and Kazuo Tsutsui and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100830498,
  author = {"Yusuke Takei" and "Masayuki Kamiya" and "Kazuo Tsutsui" and "Wataru Saito" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  journal = {Physica Status Solidi A},
  year = 2015,
}

@article{CTT100830372,
  author = {"Yusuke Takei" and "Mari Okamoto" and "Wataru Saito" and "Kazuo Tsutsui" and "Kuniyuki Kakushima" and "Hitoshi Wakabayashi" and "Yoshinori Kataoka" and "Hiroshi Iwai"},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  journal = {ECS Transactions},
  year = 2014,
}

@inproceedings{CTT100830121,
  author = {Yusuke Takei and Tomohiro Shimoda and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai},
  title = {Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830265,
  author = {Kazuo Tsutsui and Masayuki Kamiya and Yusuke Takei and Wataru Saito and Kuniyuki Kakushima and Hitoshi Wakabayashi and Yoshinori Kataoka and Hiroshi Iwai},
  title = {Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830266,
  author = {Y. Takei and M. Okamoto and W. Saito and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y. Kataoka and H. Iwai},
  title = {Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830474,
  author = {M. Kamiya and Y. Takei and W. Saito and K. Kakushima and H. Wakabayashi and Y. Kataoka and K. Tsutsui and H. Iwai},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673148,
  author = {Yusuke Takei and Mari Okamoto and S. Man and Ryosuke Kayanuma and Masayuki Kamiya and 齋藤渉 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674049,
  author = {武井優典 and 岡本真里 and マンシン and 萱沼怜 and 神谷真行 and 齋藤渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673149,
  author = {Masayuki Kamiya and Yusuke Takei and 齋藤渉 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673186,
  author = {Sin Man and Rei Kayanuma and Yusuke Takei and T. Takahashi and M. Shimizu and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and Yoshinori Kataoka and HIROSHI IWAI},
  title = {A Study on the Fabrication of GaN-FinFET Using  Selective Area Growth Method},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674087,
  author = {神谷真行 and 武井優典 and 齋藤渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661657,
  author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2013,
}

@misc{CTT100701968,
  author = {武井優典},
  title = {AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究},
  year = 2016,
}

@misc{CTT100717091,
  author = {武井優典},
  title = {AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究},
  year = 2016,
}

@misc{CTT100701969,
  author = {武井優典},
  title = {AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究},
  year = 2016,
}



@phdthesis{CTT100701968,
  author = {武井優典},
  title = {AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究},
  school = {東京工業大学},
  year = 2016,
}

@phdthesis{CTT100717091,
  author = {武井優典},
  title = {AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究},
  school = {東京工業大学},
  year = 2016,
}

@phdthesis{CTT100701969,
  author = {武井優典},
  title = {AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究},
  school = {東京工業大学},
  year = 2016,
}