@article{CTT100920100,
  author = {Abe Katsumi and Kamiya Toshio and Hosono Hideo},
  title = {Quantum confinement effects in amorphous In-Ga-Zn-O thin-film transistors with quantum well channel},
  journal = {Applied Physics Letters},
  year = 2024,
}

@article{CTT100693329,
  author = {Jakub Grochowski and Yuichiro Hanyu and Katsumi Abe and Jakub Kaczmarski and Jan Dyczewski and Hidenori Hiramatsu and Hideya Kumomi and Hideo Hosono and Toshio Kamiya},
  title = {Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure},
  journal = {J. Disp. Technol.},
  year = 2015,
}

@article{CTT100675005,
  author = {Kay Domen and Takaya Miyase and Katsumi Abe and Hideo Hosono and Toshio Kamiya},
  title = {Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In–Ga–Zn–O Thin-Film Transistor},
  journal = {IEEE Electron Dev. Lett.},
  year = 2014,
}

@article{CTT100677106,
  author = {Kazuo Yamada and Kenji Nomura and Katsumi Abe and Satoshi Takeda and Hideo Hosono},
  title = {Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology},
  journal = {Appl. Phys. Lett.},
  year = 2014,
}

@article{CTT100680963,
  author = {Y. Hanyu and K. Abe and K. Domen and K. Nomura and H. Hiramatsu and H. Kumomi and H. Hosono and T. Kamiya},
  title = {Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs},
  journal = {J. Displ. Technol.},
  year = 2014,
}

@article{CTT100680966,
  author = {K. Domen and T. Miyase and K. Abe and H. Hosono and T. Kamiya},
  title = {Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence},
  journal = {J. Displ. Technol.},
  year = 2014,
}

@article{CTT100667908,
  author = {Katsumi Abe and Ayumu Sato and Kenji Takahashi and Hideya Kumomi and Toshio Kamiya and Hideo Hosono},
  title = {Mobility<sup>- </sup>and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2013,
}

@article{CTT100634058,
  author = {Hiromichi Ohta and Taku Mizuno and Shijian Zheng and Takeharu Kato and Yuichi Ikuhara and Katsumi Abe and Hideya Kumomi and Kenji Nomura and Hideo Hosono},
  title = {Unusually Large Enhancement of Thermopower in an Electric Field InducedTwo-Dimensional Electron Gas},
  journal = {Advanced. Materials},
  year = 2012,
}

@article{CTT100645992,
  author = {Katsumi Abe and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice},
  journal = {Phys. Rev. B Rapid Communications},
  year = 2012,
}

@article{CTT100634064,
  author = {Katsumi Abe and Kenji Takahashi and Ayumu Sato and Hideya Kumomi and Kenji Nomura and Toshio Kamiya and Hideo Hosono},
  title = {Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors},
  journal = {Thin Solid Films},
  year = 2012,
}

@inproceedings{CTT100798094,
  author = {Yu-Shien Shiah and Joonho Bang and Katsumi Abe and Junghwan Kim and Hideo Hosono},
  title = {NBTS-free Oxide TFTs with High Mobility of 40 cm2/Vs: A Possible Origin for NBTS Instability},
  booktitle = {SID international symposium digest of technical papers},
  year = 2019,
}

@inproceedings{CTT100666121,
  author = {TOSHIO KAMIYA and K. Kimoto and N. Ohashi and Katsumi Abe and Yuichirou Hanyu and hideya kumomi and HIDEO HOSONO},
  title = {Electron-Beam-Induced Crystallization of Amorphous In-Ga-Zn-O Thin Films Fabricated by UHV Sputtering},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100666122,
  author = {K. Abe and H. Kumomi and T. Kamiya and H. Hosono},
  title = {Modeling of Transparent Amorphous Oxide Semiconductor Thin-Film Transistor},
  booktitle = {},
  year = 2013,
}

@misc{CTT100667233,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  year = 2013,
}

@misc{CTT100687477,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  year = 2013,
}

@misc{CTT100666964,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  year = 2013,
}

@misc{CTT100667135,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  year = 2013,
}

@misc{CTT100690776,
  author = {細野秀雄 and 安部勝美 and 山田　和夫 and 竹田　諭司　},
  title = {半導体膜、薄膜トランジスタ、およびこれらの製造方法},
  howpublished = {公開特許},
  year = 2015,
  month  = {},
  note   = {特願2013-169063(2013/08/16), 特開2015-037164(2015/02/23)}
}




@phdthesis{CTT100667233,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  school = {東京工業大学},
  year = 2013,
}

@phdthesis{CTT100687477,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  school = {東京工業大学},
  year = 2013,
}

@phdthesis{CTT100666964,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  school = {東京工業大学},
  year = 2013,
}

@phdthesis{CTT100667135,
  author = {Katsumi Abe},
  title = {TFT Modeling of Amorphous IGZO and Quantum Effect in Its Superlattice},
  school = {東京工業大学},
  year = 2013,
}